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STTH3006TPI

STMicroelectronics

STTH3006TPI by STMicroelectronics

STTH3006TPI by STMicroelectronics is a hyper fast recovery rectifier diode with a max reverse recovery time of 0.045 µs and supports up to 30 A output current. It operates at a peak reverse voltage of 600 V and features a flange mount design. Ideal for high-efficiency applications, it ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,423 parts In-Stock

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Anansix

USA . 2,465 parts In-Stock

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Digiode

USA . 269 parts In-Stock

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R&J Components

USA . 120 parts In-Stock

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120

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IDEA Electronic Components Group

UK . 1,327 parts In-Stock

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$0.063

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$0.057

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$0.063

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$0.057

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MKK Technologies

India . 1,650 parts In-Stock

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$0.119

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$0.119

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DigiPath Technology Company

USA . 1,650 parts In-Stock

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$0.119

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$0.119

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AZTECH Wire

Italy . 485 parts In-Stock

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$17.050

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485

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QUARKTWIN TECHNOLOGY LTD

USA . 21,380 parts In-Stock

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Parana Technologies

USA . 1,555 parts In-Stock

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$0.076

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$0.076

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Corphita

USA . 707 parts In-Stock

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707

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Perfect Parts

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Overview

Unlock unparalleled performance with the STTH3006TPI by STMicroelectronics, a leader in semiconductor innovation. This hyper-fast recovery diode excels in demanding applications, providing exceptional reliability and efficiency. Engineered for resilience with a high reverse voltage tolerance and robust thermal performance, it ensures your designs operate smoothly under pressure. Trust STMicroelectronics to enhance your projects with proven quality and cutting-edge technology that drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

This configuration offers flexibility in circuit design, enabling efficient use of space and improved electrical performance.

Maximum Reverse Recovery Time: 0.045 us

A fast recovery time enhances the performance of high-speed switching applications, reducing power losses and improving efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for optimal space utilization on PCBs and simplifies assembly in compact designs.

No. of Terminals: 3

Three terminals provide options for versatile configurations while ensuring strong connectivity within the circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers secure installation and stability, making it ideal for high-current applications.

Application: HYPER FAST RECOVERY

Hyper fast recovery capability is essential for applications requiring rapid switching, enhancing overall circuit performance.

Maximum Operating Temperature: 150 °C

A high operating temperature rating ensures reliability and operational stability in demanding environments.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and minimizes oxidation, ensuring long-lasting connections.

Terminal Position: SINGLE

Single terminal position simplifies layout design and ensures straightforward implementation in electronic circuits.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents accidental short circuits, contributing to enhanced reliability.

Diode Type: RECTIFIER DIODE

Rectifier diodes are crucial for converting alternating current (AC) to direct current (DC), making them versatile in power supplies.

Maximum Forward Voltage (VF): 2.6 V

A maximum forward voltage of 2.6V minimizes power losses during operation, improving overall energy efficiency.

Maximum Output Current: 30 A

With a robust output current rating of 30A, this diode can handle substantial loads, making it suitable for high-current applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and reliable connections, ideal for high-stress environments.

No. of Elements: 2

The presence of two elements enhances the diode's ability to handle higher power levels and improves redundancy in designs.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating allows this diode to operate safely in circuits with significant voltage swings, enhancing design flexibility.

Maximum Non Repetitive Peak Forward Current: 180 A

Capability to handle a peak current of 180A ensures that this diode can withstand transient conditions, crucial for protecting circuit components.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical characteristics and thermal stability, essential for reliable operation.

Technical Specifications

Diodes & Rectifiers STTH3006TPI attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HYPER FAST RECOVERY

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.6 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.045 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH3006TPI Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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