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STTH208RL

STMicroelectronics

STTH208RL by STMicroelectronics

STTH208RL by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.075 µs and can handle up to 800 V. It operates at temperatures up to 175 °C and supports currents of 2 A. Ideal for applications requiring efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,812 parts In-Stock

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5,812

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Anansix

USA . 2,620 parts In-Stock

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2,620

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Digiode

USA . 828 parts In-Stock

1+ parts

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828

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Resion

USA . 790 parts In-Stock

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790

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,219 parts In-Stock

1+ parts

$0.165

100+ parts

-

1k+ parts

$0.148

10k+ parts

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2,219

$0.165

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$0.148

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MKK Technologies

India . 985 parts In-Stock

1+ parts

$0.310

100+ parts

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985

$0.310

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DigiPath Technology Company

USA . 985 parts In-Stock

1+ parts

$0.310

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985

$0.310

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AZTECH Wire

Italy . 997 parts In-Stock

1+ parts

$9.270

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997

$9.270

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QUARKTWIN TECHNOLOGY LTD

USA . 10,688 parts In-Stock

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10,688

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Parana Technologies

USA . 1,677 parts In-Stock

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100+ parts

$0.197

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1,677

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$0.197

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Corphita

USA . 770 parts In-Stock

1+ parts

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770

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Overview

Unlock exceptional performance with the STTH208RL diode from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for high voltage ultra-fast recovery applications, this reliable rectifier ensures efficiency and longevity, making it ideal for demanding environments. With its robust construction and superior temperature tolerance, you can trust the STTH208RL to deliver consistent quality and reliability, enhancing your projects while reducing downtime. Experience the benefits of advanced technology that drives your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures good durability, resistance to moisture, and reliable performance in various environmental conditions.

Config: SINGLE

A single configuration allows for simpler circuit designs and can be beneficial in applications requiring straightforward functionality.

Maximum Reverse Recovery Time: 0.075 µs

A low reverse recovery time enhances the diode's efficiency in high-speed switching applications, making it a suitable choice for advanced electronic devices.

Package Shape: ROUND

The round package shape assists in effective heat dissipation and can help in compact arrangements on circuit boards.

No. of Terminals: 2

Having two terminals simplifies the installation and connectivity process in circuits, facilitating easier implementation.

Package Style (Meter): LONG FORM

The long-form package style provides additional flexibility in various design configurations and can help in maintaining a compact footprint.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage with ultra-fast recovery, this diode is ideal for applications where quick response times and voltage protection are crucial.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature ensures the diode can function in demanding environments without risk of failure.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, enhancing long-term reliability in circuit connections.

Terminal Position: AXIAL

The axial terminal position supports easy mounting in a wide range of PCB layouts, making it versatile for various designs.

Case Connection: ISOLATED

An isolated case connection increases safety and performance in high voltage applications by reducing the risk of unwanted feedback or shorts.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed to efficiently convert alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.25 V

A maximum forward voltage of 1.25 V indicates low forward voltage drop, enhancing overall circuit efficiency and reducing power loss.

Maximum Output Current: 2 A

With a maximum output current of 2 A, this diode is suitable for a variety of applications, ensuring it can handle reasonable load demands.

Terminal Form: WIRE

Wire terminals allow for versatile connection options in circuits, making it adaptable for various installation preferences.

Maximum Repetitive Peak Reverse Voltage: 800 V

A high maximum repetitive peak reverse voltage makes this diode capable of handling significant voltage spikes, essential for robust circuit protection.

Maximum Non-Repetitive Peak Forward Current: 45 A

The ability to handle a maximum non-repetitive peak forward current of 45 A ensures reliable performance during transient surges, offering additional safety in high-demand scenarios.

Diode Element Material: SILICON

Made from silicon, this diode benefits from excellent thermal stability and high efficiency, fundamental for modern electronics applications.

Technical Specifications

Diodes & Rectifiers STTH208RL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY, SNUBBER DIODE, FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

45 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH208RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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