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STTH2006W

STMicroelectronics

STTH2006W by STMicroelectronics

STTH2006W by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.05 µs and a peak reverse voltage of 600 V. It operates at up to 175 °C with a forward voltage drop of 1.35 V. Ideal for demanding applications requiring efficiency and reliability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,974 parts In-Stock

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4,974

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Digiode

USA . 3,074 parts In-Stock

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3,074

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Anansix

USA . 1,156 parts In-Stock

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1,156

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,962 parts In-Stock

1+ parts

$0.146

100+ parts

-

1k+ parts

$0.132

10k+ parts

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1,962

$0.146

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$0.132

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.217

100+ parts

$0.197

1k+ parts

$0.178

10k+ parts

-

500

$0.217

$0.197

$0.178

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MKK Technologies

India . 431 parts In-Stock

1+ parts

$0.275

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431

$0.275

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DigiPath Technology Company

USA . 431 parts In-Stock

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$0.275

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431

$0.275

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AZTECH Wire

Italy . 219 parts In-Stock

1+ parts

$14.470

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219

$14.470

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Kepictronics

USA . 5,000 parts In-Stock

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Corphita

USA . 4,737 parts In-Stock

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4,737

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Perfect Parts

USA . 1,329 parts In-Stock

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1,329

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Parana Technologies

USA . 469 parts In-Stock

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$0.175

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469

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$0.175

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Overview

Unlock superior performance with the STTH2006W from STMicroelectronics, a leader in semiconductor innovation. This ultra-fast recovery rectifier diode ensures reliability in high-voltage applications, boasting exceptional thermal stability up to 175 °C. With its robust design and impressive output current of 20 A, it delivers unmatched efficiency and longevity for your projects, making it an invaluable asset for electronics engineers seeking quality and performance. Choose STMicroelectronics for cutting-edge solutions that elevate your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies circuit design and reduces the footprint in compact applications.

Maximum Reverse Recovery Time: 0.05 us

A low reverse recovery time enhances efficiency in switching applications, minimizing power loss.

Package Shape: RECTANGULAR

The rectangular shape allows for effective space utilization on PCBs and easier mounting options.

No. of Terminals: 2

With only two terminals, installation is straightforward and reduces the complexity of connections.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a secure attachment to surfaces, ensuring stability in high-vibration environments.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high-voltage applications, this diode offers ultra-fast recovery, making it ideal for power electronics.

Maximum Operating Temperature: 175 °C

The capability to operate at high temperatures enhances reliability and performance in demanding environments.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and reduces the risk of corrosion, ensuring long-term reliability.

Terminal Position: SINGLE

A single terminal position simplifies layout design and aids in more efficient manufacturing processes.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is essential for converting AC to DC, crucial for many power supply applications.

Maximum Forward Voltage (VF): 1.35 V

A low forward voltage drop increases overall circuit efficiency and reduces thermal stress on the component.

Maximum Output Current: 20 A

The ability to handle up to 20 A makes this diode suitable for high-current applications without risk of failure.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical and electrical connections, ideal for high-stress environments.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating allows this diode to be used in high-voltage circuits, ensuring versatility.

Maximum Non-Repetitive Peak Forward Current: 160 A

This high non-repetitive peak forward current capability allows the diode to withstand sudden surges, enhancing reliability.

Diode Element Material: SILICON

Silicon diodes are widely used due to their efficiency, high-temperature capabilities, and established reliability in various applications.

Technical Specifications

Diodes & Rectifiers STTH2006W attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.35 V

JEDEC-95 Code:

DO-247

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH2006W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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