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STTH2002G

STMicroelectronics

STTH2002G by STMicroelectronics

STTH2002G by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.04 µs and supports up to 20 A output current. It operates at a max temp of 175 °C, making it ideal for high-efficiency applications. Its compact SO package ensures easy surface mounting.

Median Price

$1.180

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 892 parts In-Stock

1+ parts

$1.180

100+ parts

$0.930

1k+ parts

$0.780

10k+ parts

-

892

$1.180

$0.930

$0.780

-

Vyrian

USA . 5,244 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,244

-

-

-

-

Anansix

USA . 2,698 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,698

-

-

-

-

Digiode

USA . 2,435 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,435

-

-

-

-

LWI Electronics Inc

India . 475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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475

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,046 parts In-Stock

1+ parts

$0.053

100+ parts

-

1k+ parts

$0.048

10k+ parts

-

2,046

$0.053

-

$0.048

-

MKK Technologies

India . 827 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

-

827

$0.100

-

-

-

DigiPath Technology Company

USA . 827 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

-

827

$0.100

-

-

-

AZTECH Wire

Italy . 904 parts In-Stock

1+ parts

$11.170

100+ parts

-

1k+ parts

-

10k+ parts

-

904

$11.170

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 21,743 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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21,743

-

-

-

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Corphita

USA . 3,974 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,974

-

-

-

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Parana Technologies

USA . 803 parts In-Stock

1+ parts

-

100+ parts

$0.064

1k+ parts

-

10k+ parts

-

803

-

$0.064

-

-

Overview

Unlock unparalleled performance with the STTH2002G from STMicroelectronics, your go-to solution for ultra-fast recovery applications. Crafted with precision, this reliable rectifier diode guarantees exceptional quality and efficiency, enabling seamless operation even in demanding environments. With a compact design and robust thermal management, it’s perfect for various electronic devices. Elevate your projects with STMicroelectronics—where innovation meets excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making this product suitable for various applications.

Configuration: SINGLE

Single configuration optimizes space and simplifies circuit design, enhancing ease of integration.

Surface Mount: YES

The surface mount capability allows for automated assembly processes and efficient use of PCB space.

Maximum Reverse Recovery Time: 0.04 us

A low reverse recovery time ensures high efficiency in switching applications, reducing power losses.

Package Shape: RECTANGULAR

The rectangular package shape efficiently utilizes board space and is ideal for compact designs.

Number of Terminals: 2

With only two terminals, the complexity of wiring is reduced, simplifying circuit assembly.

Package Style: SMALL OUTLINE

The small outline package style allows for high-density circuit designs, perfect for modern electronics.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery applications, this diode is ideal for high-speed circuits, enhancing overall performance.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature expands the application range, making it suitable for high-temperature environments.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and contributes to reliable electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies layout design, facilitating easier integration into electronic circuits.

Case Connection: CATHODE

The cathode connection ensures straightforward polarity applications, enhancing compatibility with existing designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it versatile for power supply applications.

Maximum Forward Voltage (VF): 0.95 V

A low forward voltage drop minimizes power loss, optimizing efficiency in power conversion applications.

Maximum Output Current: 20 A

With a maximum output current of 20 A, this product is capable of handling high load conditions effectively.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical stability and soldering reliability on PCBs.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high repetitive peak reverse voltage increases the reliability in high-voltage applications, ensuring durability.

Maximum Non-Repetitive Peak Forward Current: 175 A

This high peak forward current capability makes the diode resilient under surge conditions, providing robust performance.

Diode Element Material: SILICON

Silicon as the diode element material ensures excellent electrical performance and thermal conductivity, ideal for power applications.

Technical Specifications

Diodes & Rectifiers STTH2002G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

175 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.04 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH2002G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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