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STTH2002CG

STMicroelectronics

STTH2002CG by STMicroelectronics

STTH2002CG by STMicroelectronics is a rectifier diode with common cathode, 2 elements. It has a max output current of 15A and a max repetitive peak reverse voltage of 200V. Ideal for applications requiring high efficiency, it operates at temperatures up to 175°C.

Median Price

$2.770

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 85 parts In-Stock

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$2.770

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85

$2.770

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Digiode

USA . 404 parts In-Stock

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$2.632

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Chip Stock

USA . 19,198 parts In-Stock

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Vyrian

USA . 7,311 parts In-Stock

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Flip Electronics

USA . 2,500 parts In-Stock

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Anansix

USA . 1,431 parts In-Stock

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ComSIT Distribution GmbH

Germany . 696 parts In-Stock

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Bristol Electronics

USA . 100 parts In-Stock

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Flex Direct, LLC

USA . 100 parts In-Stock

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Microfarads

USA . 79 parts In-Stock

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Nova Conductors

Japan . 60 parts In-Stock

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Cogito LLC

Ukraine . 5 parts In-Stock

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IDEA Electronic Components Group

UK . 1,181 parts In-Stock

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$0.010

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$0.009

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$0.010

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MKK Technologies

India . 1,116 parts In-Stock

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$0.019

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DigiPath Technology Company

USA . 1,116 parts In-Stock

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$0.019

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$0.019

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.107

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$0.097

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$0.088

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40

$0.107

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Aztec Data Supply Inc.

USA . 1,320 parts In-Stock

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$0.140

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$0.140

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Ampacity Inc.

Singapore . 85 parts In-Stock

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$2.350

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Corphita

USA . 1,313 parts In-Stock

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$2.493

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AZTECH Wire

Italy . 680 parts In-Stock

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$17.840

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Lixinc

USA . 17,458 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

Germany . 7,488 parts In-Stock

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Argo Parts USA

USA . 4,565 parts In-Stock

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Continental Prestige Electronics

USA . 3,382 parts In-Stock

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Parana Technologies

USA . 1,765 parts In-Stock

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$0.012

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Kepictronics

USA . 1,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,000 parts In-Stock

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Assy Fe

Spain . 750 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Unleash the power of efficiency with the STTH2002CG diode by STMicroelectronics. Crafted with precision and quality, this diode offers unparalleled reliability and performance in a compact, easy-to-mount package. Ideal for a wide range of applications, from power supplies to motor drives, this diode ensures optimal functionality and minimal energy loss. Experience the seamless integration and robust design that only STMicroelectronics can provide, delivering value and benefits that exceed expectations. Upgrade your projects with the STTH2002CG diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient and reliable circuit connections.

Maximum Reverse Recovery Time: 0.027 us

Ensures fast switching performance and reduces power loss.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, ensuring stable operation in various environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.89 V

Provides low voltage drop, reducing power dissipation and improving efficiency.

Maximum Output Current: 15 A

Capable of handling high currents, suitable for demanding applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

Can withstand high reverse voltages, ensuring reliability in circuit operation.

Technical Specifications

Diodes & Rectifiers STTH2002CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

90 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.027 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH2002CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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