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STTH16L06CGY-TR

STMicroelectronics

STTH16L06CGY-TR by STMicroelectronics

STTH16L06CGY-TR by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.055 µs and a peak repetitive reverse voltage of 600 V. It operates efficiently in temperatures from -40 °C to 175 °C. Ideal for surface mount applications, it ensures reliable performance with low reverse current (8 µA).

Median Price

$1.640

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2 parts In-Stock

1+ parts

$0.655

100+ parts

-

1k+ parts

-

10k+ parts

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2

$0.655

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-

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Chip1Stop

Japan . 2 parts In-Stock

1+ parts

$1.100

100+ parts

-

1k+ parts

-

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-

2

$1.100

-

-

-

Mouser Electronics

USA . 74 parts In-Stock

1+ parts

$2.180

100+ parts

$1.100

1k+ parts

$0.807

10k+ parts

-

74

$2.180

$1.100

$0.807

-

DigiKey

USA . 27 parts In-Stock

1+ parts

$2.200

100+ parts

$1.096

1k+ parts

$0.799

10k+ parts

$0.767

27

$2.200

$1.096

$0.799

$0.767

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 687 parts In-Stock

1+ parts

$0.534

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687

$0.534

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Vyrian

USA . 7,220 parts In-Stock

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7,220

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Anansix

USA . 99 parts In-Stock

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99

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,942 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

$0.135

10k+ parts

-

1,942

$0.150

-

$0.135

-

MKK Technologies

India . 160 parts In-Stock

1+ parts

$0.282

100+ parts

-

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160

$0.282

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-

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DigiPath Technology Company

USA . 160 parts In-Stock

1+ parts

$0.282

100+ parts

-

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160

$0.282

-

-

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Corphita

USA . 3,542 parts In-Stock

1+ parts

$0.506

100+ parts

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3,542

$0.506

-

-

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Microchip USA

USA . 7,072 parts In-Stock

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7,072

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 1,640 parts In-Stock

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100+ parts

$0.179

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1,640

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$0.179

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Eastek

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Overview

Unlock unparalleled performance with the STMicroelectronics STTH16L06CGY-TR diode, engineered for high-voltage ultra-fast recovery applications. This reliable component boasts exceptional quality backed by STMicroelectronics' reputation for innovation and excellence. With its compact design and robust specifications, it ensures top-notch efficiency and durability in various electronic systems, empowering your designs with reliability and precision. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material ensures durability and resistance to environmental stresses, making the diode reliable in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

A common cathode configuration enhances circuit design flexibility, allowing for simpler assembly and easier integration into systems.

Surface Mount: YES

Surface mount capability allows for high-density PCB design, reducing board space and improving performance in compact applications.

Maximum Reverse Recovery Time: 0.055 us

A low reverse recovery time enables faster switching, which is crucial for high-speed applications and improves overall circuit efficiency.

Maximum Reverse Current: 8 uA

With a minimal reverse current, this diode provides better energy efficiency and reduces power loss during operation.

Package Shape: RECTANGULAR

The rectangular package shape is optimal for effective space utilization on PCB layouts, facilitating compact designs.

No. of Terminals: 2

A simple two-terminal design contributes to ease of installation and lower complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for use in compact and portable electronic devices, enhancing versatility.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage ultra-fast recovery, this diode is ideal for demanding applications in power conversion and switching power supplies.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature ensures reliable performance in severe thermal environments, making it suitable for automotive and industrial applications.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures functionality in harsh conditions, providing robustness in diverse applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and reduces the risk of whisker growth, ensuring reliable connections during assembly.

Terminal Position: SINGLE

Having a single terminal position simplifies the mounting process and minimizes installation errors.

Case Connection: CATHODE

The cathode case connection type increases compatibility with common circuit designs, facilitating easier integration.

Peak Reflow Temperature °C: 245

A peak reflow temperature rating facilitates compatibility with standard soldering processes, ensuring reliable assembly and longevity.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 indicates high quality and reliability, making it appropriate for automotive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, essential for power supplies and converter circuits.

Maximum Forward Voltage (VF): 2.08 V

A maximum forward voltage of 2.08 V ensures efficient conduction with minimal power loss, enhancing energy efficiency in circuits.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical and electrical connections, improving reliability in high-stress environments.

No. of Elements: 2

Having two elements allows for greater functionality in a single package, reducing the total component count in designs.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating makes this diode suitable for use in high-voltage applications, ensuring reliable operation under stress.

Maximum Non-Repetitive Peak Forward Current: 120 A

High forward current capacity allows handling of large surges of current, making it effective in high-power environments.

Diode Element Material: SILICON

Silicon as the diode element material ensures good electrical performance and stability, contributing to the overall reliability of the component.

Technical Specifications

Diodes & Rectifiers STTH16L06CGY-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.08 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

8 uA

Maximum Reverse Recovery Time:

.055 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH16L06CGY-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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