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STTH1602CG

STMicroelectronics

STTH1602CG by STMicroelectronics

STTH1602CG by STMicroelectronics is a common cathode rectifier diode designed for efficiency, featuring a max reverse recovery time of 0.026 µs and handling up to 10 A output current. It operates at temperatures up to 175 °C and supports surface mount applications. Ideal for high-performance power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,019 parts In-Stock

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Anansix

USA . 2,787 parts In-Stock

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2,787

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Digiode

USA . 1,464 parts In-Stock

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1,464

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Zilex Electronics Inc.

Canada . 10 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,928 parts In-Stock

1+ parts

$0.076

100+ parts

-

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$0.069

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1,928

$0.076

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$0.069

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MKK Technologies

India . 1,095 parts In-Stock

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$0.144

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1,095

$0.144

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DigiPath Technology Company

USA . 1,095 parts In-Stock

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$0.144

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1,095

$0.144

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AZTECH Wire

Italy . 357 parts In-Stock

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$21.010

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357

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,719 parts In-Stock

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19,719

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Parana Technologies

USA . 2,048 parts In-Stock

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$0.091

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2,048

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$0.091

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Corphita

USA . 476 parts In-Stock

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Overview

Unlock exceptional performance with the STTH1602CG from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality rectifier diode is designed for efficiency and reliability, making it perfect for applications requiring robust power management. With its compact surface-mount design and impressive thermal characteristics, this diode enhances system longevity while simplifying integration into your projects. Elevate your designs with proven technology that delivers outstanding value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body offers excellent protection against environmental factors, ensuring longevity and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for simplified circuit design and layout, making integration easier in various applications.

Surface Mount: YES

The surface mount feature facilitates automated assembly and saves board space, enhancing manufacturing efficiency.

Maximum Reverse Recovery Time: 0.026 us

A low reverse recovery time helps improve switching performance, making it suitable for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape ensures a compact design that can fit into tight spaces within various electronic assemblies.

No. of Terminals: 2

With only two terminals, the diode is easy to connect in circuits, reducing complexity in wiring.

Package Style (Meter): SMALL OUTLINE

The small outline design contributes to a smaller footprint on the PCB, optimizing space utilization.

Application: EFFICIENCY

Designed for efficiency, this diode minimizes power loss, making it an ideal choice for energy-conscious applications.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows for reliable performance in demanding environments, increasing design flexibility.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability, ensuring robust connections and ease of assembly.

Terminal Position: SINGLE

The single terminal position simplifies the design and layout on the PCB, resulting in a cleaner design.

Case Connection: CATHODE

The cathode connection ensures proper functionality in rectification applications, offering maximum efficiency.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum time of 30 seconds at peak reflow temperature allows for proper soldering while preventing damage to sensitive components.

Peak Reflow Temperature: 245 °C

Capable of withstanding high temperatures during soldering, ensuring reliability and resilience against thermal stress.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component efficiently converts AC to DC, making it essential for power supply circuits.

Maximum Forward Voltage (VF): 0.89 V

A low forward voltage drop enhances overall circuit efficiency, reducing heat generation and energy loss.

Maximum Output Current: 10 A

Able to handle a maximum output current of 10 A, making it suitable for a wide range of applications without risk of damage.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and optimal solder joint quality, enhancing reliability.

No. of Elements: 2

Having two elements allows for greater control in circuit management, improving performance in various setups.

Maximum Repetitive Peak Reverse Voltage: 200 V

This allows the diode to withstand significant voltage spikes, protecting the circuit from damage.

Maximum Non-Repetitive Peak Forward Current: 80 A

The ability to handle high non-repetitive current makes it robust against transient currents, ensuring durability in demanding scenarios.

Diode Element Material: SILICON

Silicon is widely used in semiconductors for its excellent electrical properties, ensuring reliable performance in various applications.

Technical Specifications

Diodes & Rectifiers STTH1602CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.026 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH1602CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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