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STTH15S12W

STMicroelectronics

STTH15S12W by STMicroelectronics

STTH15S12W by STMicroelectronics is a single rectifier diode with 1200V max reverse voltage, 0.04us recovery time, and 10uA reverse current. Ideal for high voltage ultra-fast recovery applications with a max operating temp of 175°C. Package style: flange mount, terminal form: through-hole.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,634 parts In-Stock

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2,634

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Anansix

USA . 2,384 parts In-Stock

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2,384

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Vyrian

USA . 2,123 parts In-Stock

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2,123

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,156 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

$0.099

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1,156

$0.109

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$0.099

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MKK Technologies

India . 1,233 parts In-Stock

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$0.206

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1,233

$0.206

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DigiPath Technology Company

USA . 1,233 parts In-Stock

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$0.206

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1,233

$0.206

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Ampacity Inc.

Singapore . 780 parts In-Stock

1+ parts

$3.010

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780

$3.010

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AZTECH Wire

Italy . 619 parts In-Stock

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$14.587

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619

$14.587

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Lixinc

USA . 14,045 parts In-Stock

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14,045

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Argo Parts USA

USA . 4,746 parts In-Stock

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4,746

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Continental Prestige Electronics

USA . 3,992 parts In-Stock

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Corphita

USA . 1,000 parts In-Stock

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1,000

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Parana Technologies

USA . 791 parts In-Stock

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$0.131

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791

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$0.131

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Elevate your high voltage ultra-fast recovery applications with the STTH15S12W diode by STMicroelectronics. Manufactured with precision and expertise, this rectifier diode offers unparalleled quality and reliability. With a maximum reverse recovery time of 0.04 us and a maximum forward voltage of 2.7 V, this single-configured diode provides efficient performance. Perfect for flange mount installations, this product is designed to withstand temperatures up to 175°C. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations and unlocks endless possibilities for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Simplifies circuit design and installation process.

Maximum Reverse Recovery Time: 0.04 us

Ensures fast switching speed, ideal for high frequency applications.

Maximum Reverse Current: 10 uA

Offers low leakage current for efficient operation.

Package Shape: RECTANGULAR

Allows for easy placement on circuit boards.

No. of Terminals: 2

Simplifies connection and integration into circuits.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting and secure attachment in systems.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Suitable for high voltage applications requiring fast recovery times.

Maximum Operating Temperature: 175 °C

Can withstand high temperature environments without compromising performance.

Terminal Position: SINGLE

Allows for easy connection to other components.

Case Connection: CATHODE

Clearly indicates the polarity for proper installation.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC to DC voltage.

Maximum Forward Voltage (VF): 2.7 V

Offers low voltage drop for efficient power conversion.

Terminal Form: THROUGH-HOLE

Provides secure and reliable connections to the circuit board.

Maximum Repetitive Peak Reverse Voltage: 1200 V

Suitable for high voltage applications requiring reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 130 A

Capable of handling high peak currents without damage.

Diode Element Material: SILICON

Ensures high reliability and long-term performance.

Technical Specifications

Diodes & Rectifiers STTH15S12W attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.7 V

JEDEC-95 Code:

DO-247

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.04 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH15S12W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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