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STTH1302CG-TR

STMicroelectronics

STTH1302CG-TR by STMicroelectronics

STTH1302CG-TR by STMicroelectronics is a common cathode rectifier diode designed for efficiency, featuring a max reverse recovery time of 0.025 µs and handling up to 6.5 A output current. It operates at a peak reflow temp of 245 °C and supports applications in power management. Its compact SO package ensures easy surface mounting in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 7,912 parts In-Stock

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7,912

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Vyrian

USA . 7,810 parts In-Stock

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7,810

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Anansix

USA . 2,469 parts In-Stock

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2,469

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Digiode

USA . 1,502 parts In-Stock

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1,502

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Distributors (Availability)

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.038

100+ parts

$0.035

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$0.031

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-

200

$0.038

$0.035

$0.031

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IDEA Electronic Components Group

UK . 487 parts In-Stock

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$0.182

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-

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$0.164

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487

$0.182

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$0.164

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MKK Technologies

India . 2,067 parts In-Stock

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$0.343

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2,067

$0.343

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DigiPath Technology Company

USA . 2,067 parts In-Stock

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$0.343

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2,067

$0.343

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AZTECH Wire

Italy . 766 parts In-Stock

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$20.150

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766

$20.150

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RC Electronics

USA . 147,525 parts In-Stock

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147,525

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Perfect Parts

USA . 10,080 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,791 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,998 parts In-Stock

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Kepictronics

USA . 4,500 parts In-Stock

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Metaverse IC Inc.

Canada . 4,000 parts In-Stock

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Corphita

USA . 1,130 parts In-Stock

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1,130

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Parana Technologies

USA . 1,037 parts In-Stock

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$0.218

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1,037

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$0.218

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Overview

Unlock your designs’ full potential with the STTH1302CG-TR from STMicroelectronics, a high-quality rectifier diode tailored for efficiency and performance. Embrace the advantages of ST's renowned innovation and reliability, ensuring your projects are built on a foundation of excellence. Perfect for demanding applications, this surface-mount component offers unmatched thermal stability and robust output, empowering you to create durable solutions that stand the test of time. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and reliability, making the diode suitable for various environments.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for efficient integration into circuits, facilitating easier design and enhanced performance.

Surface Mount: YES

Surface mount capability enables compact designs and faster assembly processes, making the product ideal for modern electronics.

Maximum Reverse Recovery Time: 0.025 µs

A low reverse recovery time improves efficiency and reduces switching losses in high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage on PCBs and allows for easier layout designs.

No. of Terminals: 2

A two-terminal design simplifies connections and reduces potential points of failure, enhancing reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for more efficient use of space in electronic devices, making it ideal for compact applications.

Application: EFFICIENCY

Designed for efficiency, this diode minimizes energy losses and enhances overall system performance.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature rating suggests robustness and safety in demanding environments.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish ensures good solderability and protection against corrosion, enhancing the longevity of connections.

Terminal Position: SINGLE

Single terminal positioning enhances layout flexibility and simplifies circuit design.

Case Connection: CATHODE

Cathode connection design offers straightforward integration into circuits, ensuring ease of use.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum reflow time of 30 seconds allows for compatibility with various manufacturing processes, reducing assembly issues.

Peak Reflow Temperature: 245 °C

High reflow temperature tolerance ensures durability during soldering processes, supporting reliable production.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component effectively manages current flow, making it suitable for power conversion applications.

Maximum Forward Voltage (VF): 0.95 V

A low forward voltage drop improves efficiency, resulting in reduced power loss during operation.

Maximum Output Current: 6.5 A

With a maximum output current of 6.5 A, this diode can handle significant loads, making it suitable for high-power applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical strength and good electrical contact, improving overall reliability.

No. of Elements: 2

Two elements in a single package allow for balanced performance and easier integration into diverse applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

The ability to withstand up to 200 V of reverse voltage makes this diode suitable for high-voltage applications.

Maximum Non-Repetitive Peak Forward Current: 70 A

A high non-repetitive peak forward current rating indicates robustness against sudden surges, ensuring reliability in demanding conditions.

Diode Element Material: SILICON

Silicon material offers excellent electrical properties, leading to improved performance in rectification applications.

Technical Specifications

Diodes & Rectifiers STTH1302CG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

70 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

6.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.025 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH1302CG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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