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STTH1210G

STMicroelectronics

STTH1210G by STMicroelectronics

STTH1210G by STMicroelectronics is a high-voltage ultra-fast soft recovery rectifier diode, featuring a max reverse recovery time of 0.09 µs and handling up to 12 A output current. It operates at temperatures up to 175 °C and supports 1000 V peak reverse voltage. Ideal for applications requiring efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,389 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,389

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-

-

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Digiode

USA . 664 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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664

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Anansix

USA . 308 parts In-Stock

1+ parts

-

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308

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 699 parts In-Stock

1+ parts

$0.162

100+ parts

-

1k+ parts

$0.146

10k+ parts

-

699

$0.162

-

$0.146

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MKK Technologies

India . 2,263 parts In-Stock

1+ parts

$0.304

100+ parts

-

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2,263

$0.304

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DigiPath Technology Company

USA . 2,263 parts In-Stock

1+ parts

$0.304

100+ parts

-

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2,263

$0.304

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AZTECH Wire

Italy . 1,204 parts In-Stock

1+ parts

$12.580

100+ parts

-

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1,204

$12.580

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Corphita

USA . 4,093 parts In-Stock

1+ parts

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4,093

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

1+ parts

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3,500

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Parana Technologies

USA . 1,907 parts In-Stock

1+ parts

-

100+ parts

$0.194

1k+ parts

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10k+ parts

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1,907

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$0.194

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Overview

Elevate your designs with the STTH1210G from STMicroelectronics, a top-tier rectifier diode engineered for high voltage and ultra-fast recovery applications. Renowned for their commitment to quality, STMicroelectronics delivers unmatched reliability and performance, ensuring longevity and efficiency in your projects. With its compact design and robust capabilities, the STTH1210G is perfect for power supplies, renewable energy systems, and industrial automation. Experience the advantage of superior technology that meets your demands while enhancing overall system performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, making it suitable for various applications.

Config: SINGLE

A single configuration simplifies design and allows for easy integration into circuits.

Surface Mount: YES

Surface mount capability ensures a compact design and enables automated assembly processes.

Maximum Reverse Recovery Time: 0.09 µs

The ultra-fast recovery time reduces switching losses, making it efficient for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape allows for optimized layout in PCBs, facilitating effective space utilization.

No. of Terminals: 2

Having only two terminals simplifies installation and connection, reducing potential points of failure.

Package Style (Meter): SMALL OUTLINE

The small outline package is space-efficient, making it ideal for compact electronic designs.

Application: HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Designed for high voltage applications, this diode provides fast and soft recovery, enhancing overall circuit performance.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature ensures reliable performance even in demanding environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and resistance to corrosion, enhancing the longevity of connections.

Terminal Position: SINGLE

Single terminal position simplifies design considerations for circuit layouts.

Case Connection: CATHODE

A cathode connection design is common for rectifier applications, providing straightforward circuit integration.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply circuits.

Maximum Forward Voltage (VF): 1.7 V

The low forward voltage drop minimizes energy losses during operation, enhancing overall efficiency.

Maximum Output Current: 12 A

A maximum output current of 12 A provides ample capacity for robust applications, ensuring reliable operation under load.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and ease of soldering in surface mount applications.

Maximum Repetitive Peak Reverse Voltage: 1000 V

The high peak reverse voltage capability makes this diode suitable for high voltage applications, ensuring durability and reliability.

Maximum Non Repetitive Peak Forward Current: 80 A

Withstanding high non-repetitive peak forward current enhances the diode's robustness during transient events.

Diode Element Material: SILICON

Silicon-based diodes are known for their excellent electrical properties, ensuring efficiency and performance in diverse applications.

Technical Specifications

Diodes & Rectifiers STTH1210G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Recovery Time:

.09 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH1210G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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