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STTH10LCD06SB-TR

STMicroelectronics

STTH10LCD06SB-TR by STMicroelectronics

STTH10LCD06SB-TR by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.05 µs and can handle up to 10 A output current. It operates at temperatures up to 175 °C and features a compact surface mount design. Ideal for applications requiring efficient power management in demanding environments.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 6,530 parts In-Stock

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Vyrian

USA . 4,310 parts In-Stock

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Anansix

USA . 1,684 parts In-Stock

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Digiode

USA . 262 parts In-Stock

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IDEA Electronic Components Group

UK . 778 parts In-Stock

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$0.178

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$0.160

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778

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$0.160

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MKK Technologies

India . 2,179 parts In-Stock

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$0.334

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$0.334

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DigiPath Technology Company

USA . 2,179 parts In-Stock

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$0.334

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$0.334

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AZTECH Wire

Italy . 456 parts In-Stock

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$21.360

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456

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A-Z Elektronik GmbH

Germany . 6,299 parts In-Stock

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Corphita

USA . 4,671 parts In-Stock

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Assy Fe

Spain . 2,500 parts In-Stock

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Parana Technologies

USA . 315 parts In-Stock

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$0.212

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Kepictronics

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Overview

Unlock superior performance with the STTH10LCD06SB-TR diode from STMicroelectronics—your go-to choice for high voltage ultra-fast recovery applications. Renowned for their commitment to quality and innovation, STMicroelectronics delivers reliability you can trust. With its compact design and exceptional efficiency, this diode ensures seamless operation in demanding environments, providing customers with unmatched value, enhanced durability, and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making this diode suitable for various applications.

Config: SINGLE

A single configuration keeps the design simple and efficient, reducing the size and complexity of circuits.

Surface Mount: YES

Surface mount technology allows for a compact design and easy integration into automated assembly processes.

Maximum Reverse Recovery Time: 0.05 µs

A low reverse recovery time enhances switching performance, making this diode ideal for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, facilitating efficient layout designs.

No. of Terminals: 2

Two terminals provide a straightforward connection, minimizing the possibility of incorrect installations.

Package Style (Meter): SMALL OUTLINE

Small outline packaging is suitable for high-density applications where space is critical.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage ultra-fast recovery, this diode is perfect for applications needing rapid switching without performance degradation.

Maximum Operating Temperature: 175 °C

A maximum operating temperature of 175 °C ensures reliability and functionality in demanding thermal environments.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish improves solderability and enhances the overall longevity of the diode.

Terminal Position: SINGLE

Single terminal positioning simplifies layout and assembly processes, making the product easier to work with.

Case Connection: CATHODE

A cathode case connection allows for straightforward integration into standard rectifier applications.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum time of 30 seconds at peak reflow temperature allows for compatibility with typical soldering processes.

Peak Reflow Temperature: 260 °C

A peak reflow temperature of 260 °C enables the diode to withstand high-temperature soldering techniques without damage.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), making it essential for power applications.

Maximum Forward Voltage (VF): 1.6 V

A maximum forward voltage of 1.6 V ensures efficient performance in power conversion applications with minimal energy loss.

Maximum Output Current: 10 A

With a maximum output current of 10 A, this diode can handle substantial loads, ideal for industrial and commercial use.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical performance and are easier to solder, enhancing reliability in solder joints.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high repetitive peak reverse voltage of 600 V makes this diode suitable for high-voltage applications without risk of breakdown.

Maximum Non-Repetitive Peak Forward Current: 100 A

This diode can handle a peak forward current of up to 100 A, ensuring it can accommodate surge conditions without failure.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical characteristics and stability, making it ideal for rectification tasks.

Technical Specifications

Diodes & Rectifiers STTH10LCD06SB-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.6 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH10LCD06SB-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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