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STTH108

STMicroelectronics

STTH108 by STMicroelectronics

STTH108 by STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.075 µs and can handle up to 800 V peak reverse voltage. It operates at temperatures up to 175 °C, making it ideal for high-efficiency power applications. With a compact design and matte tin terminals, it's perfect for various electronic circuits.

Median Price

$0.918

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,500 parts In-Stock

1+ parts

-

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20,500

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Bristol Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.918

1k+ parts

$0.808

10k+ parts

-

8,000

-

$0.918

$0.808

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Dan-Mar Components

USA . 8,000 parts In-Stock

1+ parts

-

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8,000

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ComSIT Distribution GmbH

Germany . 5,100 parts In-Stock

1+ parts

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5,100

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Vyrian

USA . 4,111 parts In-Stock

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4,111

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Digiode

USA . 2,324 parts In-Stock

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2,324

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ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

1+ parts

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2,000

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Anansix

USA . 1,753 parts In-Stock

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1,753

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,093 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

$0.056

10k+ parts

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1,093

$0.063

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$0.056

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MKK Technologies

India . 1,748 parts In-Stock

1+ parts

$0.118

100+ parts

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1,748

$0.118

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DigiPath Technology Company

USA . 1,748 parts In-Stock

1+ parts

$0.118

100+ parts

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1,748

$0.118

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AZTECH Wire

Italy . 525 parts In-Stock

1+ parts

$21.350

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525

$21.350

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Component Stockers USA

USA . 260 parts In-Stock

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$99.990

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260

$99.990

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Perfect Parts

USA . 53,917 parts In-Stock

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53,917

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Kepictronics

USA . 5,456 parts In-Stock

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Corphita

USA . 3,476 parts In-Stock

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3,476

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Parana Technologies

USA . 2,030 parts In-Stock

1+ parts

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100+ parts

$0.075

1k+ parts

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2,030

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$0.075

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Overview

Unlock the potential of your projects with the STTH108 from STMicroelectronics, a trusted leader in innovation. This high-quality rectifier diode guarantees reliability and efficiency for a variety of applications, from power supplies to motor controls. With its robust design and superior performance, it ensures optimal operation even under demanding conditions. Choose STMicroelectronics for unmatched excellence and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental stresses, making this diode suitable for a variety of applications.

Config: SINGLE

A single configuration simplifies the circuitry and is ideal for applications where compactness is essential.

Maximum Reverse Recovery Time: 0.075 us

A fast reverse recovery time enhances switching performance, making this product suitable for high-frequency applications.

Package Shape: ROUND

The round shape allows for efficient heat dissipation and a stable physical footprint, which is beneficial in various designs.

Number of Terminals: 2

Two terminals facilitate straightforward installation and integration into existing circuits.

Package Style (Meter): LONG FORM

The long form style can improve space utilization on the PCB, enhancing design flexibility.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows for increased reliability and performance in demanding environments.

Terminal Finish: MATTE TIN

Matte tin terminals offer good solderability and corrosion resistance, ensuring long-term durability.

Terminal Position: AXIAL

Axial terminal positioning enables easy mounting and orientation, making it ideal for through-hole PCB designs.

Case Connection: ISOLATED

An isolated case connection minimizes the risk of short-circuits and electrical interference, enhancing safety.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.25 V

A low forward voltage drop improves energy efficiency, reducing heat generation and power losses in the circuit.

Maximum Output Current: 1 A

A maximum output of 1 A makes this diode suitable for a wide range of moderate-load applications.

Maximum Repetitive Peak Reverse Voltage: 800 V

The capability to handle up to 800 V ensures reliability in high-voltage applications, protecting against voltage spikes.

Maximum Non-Repetitive Peak Forward Current: 25 A

A high non-repetitive peak forward current rating allows for tolerance of brief surges, ideal for applications with transient loads.

Diode Element Material: SILICON

Silicon as a diode element material provides excellent electrical characteristics and robustness, ensuring reliable performance.

Technical Specifications

Diodes & Rectifiers STTH108 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH108 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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