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STTH1003SG-TR

STMicroelectronics

STTH1003SG-TR by STMicroelectronics

STTH1003SG-TR by STMicroelectronics is a high-efficiency rectifier diode designed for surface mount applications. It features a max reverse recovery time of 0.035 µs, supports up to 10 A output current, and operates at temperatures up to 175 °C. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,574 parts In-Stock

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4,574

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Digiode

USA . 4,505 parts In-Stock

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4,505

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Anansix

USA . 2,616 parts In-Stock

1+ parts

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2,616

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Lakeland Logistics Inc

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Bristol Electronics

USA . 2,000 parts In-Stock

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2,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,940 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

$0.037

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-

1,940

$0.041

-

$0.037

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MKK Technologies

India . 2,178 parts In-Stock

1+ parts

$0.078

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2,178

$0.078

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DigiPath Technology Company

USA . 2,178 parts In-Stock

1+ parts

$0.078

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2,178

$0.078

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AZTECH Wire

Italy . 541 parts In-Stock

1+ parts

$20.820

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541

$20.820

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Component Stockers USA

USA . 799 parts In-Stock

1+ parts

$99.990

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799

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 9,939 parts In-Stock

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9,939

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Corphita

USA . 4,680 parts In-Stock

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4,680

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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Parana Technologies

USA . 758 parts In-Stock

1+ parts

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$0.050

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758

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$0.050

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Overview

Elevate your designs with the STTH1003SG-TR from STMicroelectronics, where cutting-edge technology meets unrivaled quality. This high-performance rectifier diode is engineered for efficiency and reliability, making it ideal for various applications in power management and energy conversion. With its compact size and superior thermal performance, you can trust STMicroelectronics to enhance your projects while ensuring exceptional durability and longevity. Experience the advantage of choosing a leader in semiconductor innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides excellent protection against environmental factors, ensuring reliability in various applications.

Config: SINGLE

A single configuration simplifies the circuit design and integration, making it easier to use in diverse electronic applications.

Surface Mount: YES

The surface mount capability allows for compact and efficient designs, making it suitable for modern electronic circuits.

Maximum Reverse Recovery Time: 0.035 us

A low reverse recovery time enhances the diode's efficiency, reducing power losses in high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage on PCBs (Printed Circuit Boards), providing flexibility in layout designs.

No. of Terminals: 2

With only two terminals, the diode is easy to integrate into circuits, reducing complexity and improving reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for higher density mounting on PCBs, optimizing space and improving performance.

Application: EFFICIENCY

Designed for efficiency, this diode minimizes energy loss, making it ideal for energy-conscious applications.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature expands the range of applications, making it suitable for demanding environments.

Terminal Finish: MATTE TIN

The matte tin finish ensures good solderability and better corrosion resistance, promoting longer product life.

Terminal Position: SINGLE

A single terminal position simplifies the design requirements, offering ease of assembly and improved reliability.

Case Connection: CATHODE

The cathode connection configuration is standard for rectifier diodes, ensuring compatibility with various circuit designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically optimized for converting alternating current (AC) to direct current (DC), making it essential for power conversion applications.

Maximum Forward Voltage (VF): 1.1 V

A low forward voltage ensures minimal voltage drop during operation, promoting energy efficiency.

Maximum Output Current: 10 A

With a maximum output current of 10 A, it can handle significant load currents, suitable for various high-power applications.

Terminal Form: GULL WING

The gull wing terminal form provides stability during soldering and improves reliability in surface mount applications.

Maximum Repetitive Peak Reverse Voltage: 300 V

A high reverse voltage rating allows this diode to be used in demanding high-voltage applications, ensuring durability.

Maximum Non Repetitive Peak Forward Current: 100 A

The ability to handle peak forward currents of up to 100 A makes it suitable for surge applications, providing robust performance.

Diode Element Material: SILICON

Silicon as the diode element material ensures reliable performance and a wide range of operational characteristics.

Technical Specifications

Diodes & Rectifiers STTH1003SG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH1003SG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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