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STTH1003G

STMicroelectronics

STTH1003G by STMicroelectronics

STTH1003G by STMicroelectronics is a fast recovery diode with a max DC reverse voltage of 300V and an average rectified current of 10A. It features a low forward voltage drop of 1.3V at 10A, making it ideal for efficient power management applications. Packaged in D2PAK, it's suitable for surface mount technology.

Median Price

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3

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1k+

STTH1003G by STMicroelectronics
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Digiode

USA . 4,196 parts In-Stock

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Vyrian

USA . 3,406 parts In-Stock

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Anansix

USA . 845 parts In-Stock

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AZTECH Wire

Italy . 34 parts In-Stock

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$18.270

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34

$18.270

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Component Stockers USA

USA . 552 parts In-Stock

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$99.990

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Corphita

USA . 1,567 parts In-Stock

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Parana Technologies

USA . 1,190 parts In-Stock

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MKK Technologies

India . 763 parts In-Stock

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DigiPath Technology Company

USA . 763 parts In-Stock

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IDEA Electronic Components Group

UK . 546 parts In-Stock

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Overview

Unlock unparalleled performance with the STTH1003G from STMicroelectronics, a trusted leader in semiconductor innovations. This advanced diode rectifier ensures superior efficiency and reliability for your electronic designs, whether in power management, renewable energy systems, or consumer electronics. With its fast recovery time and robust construction, you gain enhanced circuit stability and longevity, ultimately elevating your product's quality and value. Choose STMicroelectronics for cutting-edge solutions that drive success!

Feature Benefit Bullets

Standard Package: 50

A standard package of 50 units ensures that users can purchase in bulk, making it cost-effective for large-scale projects.

Category: Discrete Semiconductor Products / Diodes / Rectifiers / Diode Arrays

This product falls under a well-established category, ensuring compatibility and reliability in various applications.

Packaging: Tube

Tube packaging helps in the safe storage and easy handling of components, reducing the risk of damage during shipment.

Diode Configuration: 1 Pair Common Cathode

The common cathode configuration allows for easier circuit design and simplifies connections in dual diode applications.

Technology: Standard

The standard technology provides robust performance for a variety of applications, making it a versatile choice.

Voltage - DC Reverse (Vr) (Max): 300 V

A maximum reverse voltage of 300V allows this diode to be used in high-voltage applications, enhancing its versatility.

Current - Average Rectified (Io) (per Diode): 10A

With a high average rectified current of 10A, this product is capable of handling substantial loads, making it ideal for power applications.

Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A

A low forward voltage drop of 1.3V at high current ensures improved efficiency with reduced power loss during operation.

Speed: Fast Recovery =< 500ns, > 200mA (Io)

Fast recovery speed is critical for high-frequency switching, enhancing the performance in switch-mode power supplies.

Reverse Recovery Time (trr): 35 ns

A reverse recovery time of 35ns provides improved performance in high-speed applications, reducing losses and improving efficiency.

Current - Reverse Leakage @ Vr: 10 µA @ 300 V

Low reverse leakage current indicates minimal power loss and enhances reliability, making it suitable for energy-efficient designs.

Mounting Type: Surface Mount

Surface mount technology allows for compact circuit designs and automated assembly processes, ensuring ease of integration.

Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

The various package options provide flexibility for different PCB designs and thermal management requirements.

Supplier Device Package: D2PAK

The D2PAK package is known for excellent thermal characteristics, making it suitable for high-current applications.

Base Product Number: STTH10

The STTH10 base product number indicates a well-established line, ensuring parts availability and manufacturer support.

Moisture Sensitivity Level (MSL): 3 (168 Hours)

An MSL of 3 provides guidance for handling and storage, ensuring that users are aware of the humidity sensitivity.

Technical Specifications

Additional Parts STTH1003G attributes and parameters. Explore more Additional Parts devices from STMicroelectronics

Technical Specifications

Speed:

Fast Recovery =< 500ns, > 200mA (Io)

Category:

Discrete Semiconductor Products
Diodes Rectifiers Diode Arrays

Reverse Recovery Time (trr):

35 ns

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Standard Package:

50

Current - Reverse Leakage @ Vr:

10 µA @ 300 V

Package / Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Technology:

Standard

Diode Configuration:

1 Pair Common Cathode

Voltage - Forward (Vf) (Max) @ If:

1.3 V @ 10 A

Packaging:

Tube

Voltage - DC Reverse (Vr) (Max):

300 V

Current - Average Rectified (Io) (per Diode):

10A

Base Product Number:

STTH10

Moisture Sensitivity Level (MSL):

3 (168 Hours)

Trade Compliance

STTH1003G Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0080

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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