Loading...

STTH1002CG

STMicroelectronics

STTH1002CG by STMicroelectronics

STTH1002CG by STMicroelectronics is a common cathode rectifier diode designed for efficiency, featuring a max reverse recovery time of 0.025 µs and handling up to 8 A output current. It operates at temperatures up to 175 °C and supports surface mount applications. Ideal for high-performance power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 8,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,500

-

-

-

-

Digiode

USA . 3,521 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,521

-

-

-

-

Vyrian

USA . 2,886 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,886

-

-

-

-

Anansix

USA . 886 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

886

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 201 parts In-Stock

1+ parts

$0.129

100+ parts

-

1k+ parts

$0.116

10k+ parts

-

201

$0.129

-

$0.116

-

MKK Technologies

India . 1,426 parts In-Stock

1+ parts

$0.242

100+ parts

-

1k+ parts

-

10k+ parts

-

1,426

$0.242

-

-

-

DigiPath Technology Company

USA . 1,426 parts In-Stock

1+ parts

$0.242

100+ parts

-

1k+ parts

-

10k+ parts

-

1,426

$0.242

-

-

-

AZTECH Wire

Italy . 716 parts In-Stock

1+ parts

$18.710

100+ parts

-

1k+ parts

-

10k+ parts

-

716

$18.710

-

-

-

Kepictronics

USA . 27,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,860

-

-

-

-

Corphita

USA . 4,638 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,638

-

-

-

-

Parana Technologies

USA . 2,263 parts In-Stock

1+ parts

-

100+ parts

$0.154

1k+ parts

-

10k+ parts

-

2,263

-

$0.154

-

-

Overview

Unlock superior efficiency with the STTH1002CG diode from STMicroelectronics, a trusted leader in electronic components. This high-performance rectifier ensures reliability and durability across diverse applications, thanks to its advanced design and robust characteristics. Ideal for compact, high-temperature environments, it streamlines your circuits while minimizing losses, giving you the edge in performance and energy savings. Experience the quality that drives innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent thermal stability and protection, making it suitable for high-performance applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for simpler circuit designs when multiple diodes are used in parallel.

Surface Mount: YES

Surface mount capability enables automated assembly and saves space on the PCB, increasing design flexibility.

Maximum Reverse Recovery Time: 0.025 us

A low reverse recovery time reduces switching losses and improves the efficiency of high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape maximizes board space utilization and allows for compact layout designs.

No. of Terminals: 2

The two-terminal design simplifies the connection and reduces the complexity of the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline packages are ideal for high-density applications where space is limited.

Application: EFFICIENCY

Designed specifically for efficiency, this diode offers optimal performance in power conversion applications.

Maximum Operating Temperature: 175 °C

A high operating temperature ensures reliability and performance in demanding environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and corrosion resistance, ensuring durable connections.

Terminal Position: SINGLE

Single terminal positioning simplifies layout design and allows for easier integration into circuit boards.

Case Connection: CATHODE

The cathode connection ensures consistent performance and allows for straightforward circuit integration.

Maximum Time At Peak Reflow Temperature (s): 30

The reflow capability ensures compatibility with standard soldering processes, promoting ease of manufacturing.

Peak Reflow Temperature (°C): 245

The high reflow temperature allows for reliable soldering with various materials, increasing manufacturing flexibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.89 V

Low forward voltage drop contributes to high efficiency, reducing power losses in the circuit.

Maximum Output Current: 8 A

With a maximum output current of 8 A, it can handle substantial loads, making it suitable for a variety of applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering and better mechanical stability on the PCB.

No. of Elements: 2

Having two elements enhances the rectifying capabilities and allows for higher current handling.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high voltage rating ensures reliability in high-voltage applications, providing peace of mind for engineers.

Maximum Non-Repetitive Peak Forward Current: 50 A

The ability to handle high peak forward currents ensures robust performance in surge conditions.

Diode Element Material: SILICON

Silicon is widely used in diodes for its excellent conductivity and high temperature tolerance, ensuring reliable performance.

Technical Specifications

Diodes & Rectifiers STTH1002CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.025 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH1002CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20