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STPSC40H12CWL

STMicroelectronics

STPSC40H12CWL by STMicroelectronics

STPSC40H12CWL from STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max output current of 38 A, reverse voltage of 1200 V, and operates b/w -40 °C to 175 °C. Its compact flange mount design ensures efficient thermal management.

Median Price

$13.430

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 7,200 parts In-Stock

1+ parts

$9.679

100+ parts

-

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7,200

$9.679

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Verical

USA . 7,200 parts In-Stock

1+ parts

$9.679

100+ parts

-

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7,200

$9.679

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Chip1Stop

Japan . 5,400 parts In-Stock

1+ parts

$13.430

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-

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5,400

$13.430

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Mouser Electronics

USA . 444 parts In-Stock

1+ parts

$13.780

100+ parts

-

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$11.430

10k+ parts

-

444

$13.780

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$11.430

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DigiKey

USA . 320 parts In-Stock

1+ parts

$17.820

100+ parts

$9.778

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-

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320

$17.820

$9.778

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Avnet

USA . 1,170 parts In-Stock

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1,170

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EBV Elektronik

Germany . 90 parts In-Stock

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90

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Distributors (In-Stock)

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Digiode

USA . 319 parts In-Stock

1+ parts

$12.758

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-

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319

$12.758

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Vyrian

USA . 8,827 parts In-Stock

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8,827

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Anansix

USA . 705 parts In-Stock

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705

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Chip Stock

USA . 178 parts In-Stock

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178

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IBS Electronics

USA . 50 parts In-Stock

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$14.937

1k+ parts

$14.794

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50

-

$14.937

$14.794

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 893 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

$0.117

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893

$0.130

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$0.117

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MKK Technologies

India . 589 parts In-Stock

1+ parts

$0.244

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589

$0.244

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DigiPath Technology Company

USA . 589 parts In-Stock

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$0.244

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589

$0.244

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Corphita

USA . 1,489 parts In-Stock

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$12.087

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1,489

$12.087

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Continental Prestige Electronics

USA . 598 parts In-Stock

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$14.560

100+ parts

$11.300

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598

$14.560

$11.300

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Microchip USA

USA . 6,597 parts In-Stock

1+ parts

$46.483

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6,597

$46.483

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Eastek

USA . 975 parts In-Stock

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975

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Parana Technologies

USA . 443 parts In-Stock

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$0.155

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443

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$0.155

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Overview

Unlock unmatched performance with the STPSC40H12CWL from STMicroelectronics, a powerhouse in diodes and rectifiers. Crafted from high-quality silicon carbide, this Schottky diode delivers exceptional efficiency and reliability for demanding power applications. With an impressive operating temperature range, it excels in harsh environments, ensuring longevity and robustness. Trust in STMicroelectronics’ legacy of innovation to elevate your designs and optimize energy management today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent insulation and thermal stability, making it suitable for a wide range of applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies circuit design and allows for more efficient usage in various electronic applications.

Maximum Reverse Current: 120 uA

A low maximum reverse current enhances the efficiency of the diode, minimizing power loss during operation.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient, making it easier to integrate into compact circuit designs.

No. of Terminals: 3

With three terminals, this component allows for flexible circuit connections and improved performance in configurations requiring multiple connections.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides secure attachment and reliable performance in high-vibration environments.

Application: POWER

Designed specifically for power applications, it can handle high currents and voltages, making it ideal for industrial and consumer power supply systems.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows for robust performance in extreme conditions, ensuring reliability in demanding applications.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures that the diode functions effectively in both cold and hot environments, enhancing versatility.

Terminal Position: SINGLE

A single terminal position facilitates ease of installation within various circuit designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for efficiently converting AC to DC, making it essential for power supply circuits.

Maximum Forward Voltage (VF): 1.5 V

The low forward voltage drop minimizes energy loss when conducting, leading to better efficiency in power applications.

Maximum Output Current: 38 A

The ability to handle a maximum output current of 38 A makes this diode suitable for high-power applications, ensuring reliable operation.

Technology: SCHOTTKY

The Schottky technology enables faster switching speeds and lower voltage drops, making it advantageous for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and electrical connections, ideal for demanding environments.

No. of Elements: 2

Having two elements allows for better current handling and improved circuit performance, especially in rectification.

Maximum Repetitive Peak Reverse Voltage: 1200 V

The high peak reverse voltage rating ensures that the diode can withstand significant voltage spikes, protecting circuit integrity.

Maximum Non Repetitive Peak Forward Current: 120 A

This high non-repetitive peak forward current capability allows for transient conditions, providing resilience in power circuits.

Diode Element Material: SILICON CARBIDE

Silicon carbide offers superior thermal conductivity and efficiency, enabling higher performance and reliability compared to traditional silicon diodes.

Technical Specifications

Diodes & Rectifiers STPSC40H12CWL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

POWER

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

38 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

120 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC40H12CWL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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