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STPS8L30B

STMicroelectronics

STPS8L30B by STMicroelectronics

STMicroelectronics' STPS8L30B is a Schottky rectifier diode with 30V reverse voltage and 8A output current. It operates at a max temp of 150 °C, suitable for power applications. The diode has a low forward voltage of 0.63V and matte tin terminal finish, making it ideal for high-power circuits.

Median Price

$0.938

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 1,955 parts In-Stock

1+ parts

$0.938

100+ parts

$0.347

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$0.244

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1,955

$0.938

$0.347

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Chip Stock

USA . 7,570 parts In-Stock

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Vyrian

USA . 6,363 parts In-Stock

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6,363

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ComSIT Distribution GmbH

Germany . 3,220 parts In-Stock

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Digiode

USA . 2,818 parts In-Stock

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Microfarads

USA . 1,885 parts In-Stock

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Euro-Tech

UK . 255 parts In-Stock

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Anansix

USA . 246 parts In-Stock

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Cyclops Electronics Ltd

UK . 125 parts In-Stock

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125

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NAC Semi

USA . 119 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 100 parts In-Stock

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100

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Prism Electronics

USA . 97 parts In-Stock

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Inventory MP

USA . 50 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 25 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,155 parts In-Stock

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$0.024

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$0.022

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$0.024

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MKK Technologies

India . 1,042 parts In-Stock

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$0.045

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$0.045

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DigiPath Technology Company

USA . 1,042 parts In-Stock

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$0.045

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$0.045

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AZTECH Wire

Italy . 709 parts In-Stock

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$12.950

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$12.950

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Kepictronics

USA . 15,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,986 parts In-Stock

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RC Electronics

USA . 6,750 parts In-Stock

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$0.780

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$0.730

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$0.720

6,750

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$0.730

$0.720

Perfect Parts

USA . 4,043 parts In-Stock

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Corphita

USA . 3,067 parts In-Stock

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Parana Technologies

USA . 1,868 parts In-Stock

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$0.029

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Infinite Electronics LLP (Excess)

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ChipTracer

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Cyclops Electronics Ltd (Excess)

UK . 25 parts In-Stock

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Overview

Experience the superior quality and reliability of the STPS8L30B by STMicroelectronics, a leading manufacturer in the industry of Diodes & Rectifiers. This powerful rectifier diode offers maximum output current of 8A and features Schottky technology for efficient power applications. With a maximum repetitive peak reverse voltage of 30V and maximum non-repetitive peak forward current of 75A, this diode guarantees exceptional performance. Its small outline package shape makes it ideal for various power applications. Trust STMicroelectronics to deliver outstanding products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight, durable, and cost effective.

Configuration: SINGLE

Single configuration simplifies the circuit design and ensures consistent performance.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs.

Package Shape: RECTANGULAR

Rectangular shape is space-efficient and facilitates easy placement on the board.

Number of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting.

Application: POWER

Designed for power applications, ensuring efficient energy conversion and reliable performance.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures stability and reliability in various working conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for long-term use.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures proper alignment.

Case Connection: CATHODE

Cathode case connection offers easy identification and proper polarity alignment.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC power, essential for many electronic applications.

Maximum Forward Voltage (VF): 0.63 V

Low forward voltage drop (0.63 V) ensures minimal power loss and high efficiency.

Maximum Output Current: 8 A

High maximum output current (8 A) allows for handling of heavy load requirements with ease.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low voltage drop, suitable for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and secure solder joints for reliable connections.

Maximum Repetitive Peak Reverse Voltage: 30 V

High peak reverse voltage (30 V) ensures protection against reverse current flow and voltage spikes.

Maximum Non Repetitive Peak Forward Current: 75 A

High non-repetitive peak forward current (75 A) allows for handling of short-duration high current surges effectively.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance and stable characteristics over a wide temperature range.

Technical Specifications

Diodes & Rectifiers STPS8L30B attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.63 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS8L30B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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