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STPS40150CGY-TR

STMicroelectronics

STPS40150CGY-TR by STMicroelectronics

STPS40150CGY-TR by STMicroelectronics is a Schottky rectifier diode ideal for high voltage power applications. It features a max reverse voltage of 150V, forward current of 20A, and operates from -40 °C. Its compact surface mount design ensures efficient performance.

Median Price

$2.290

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 290 parts In-Stock

1+ parts

$2.290

100+ parts

$1.410

1k+ parts

$1.040

10k+ parts

-

290

$2.290

$1.410

$1.040

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,051 parts In-Stock

1+ parts

-

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12,051

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Digiode

USA . 1,792 parts In-Stock

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1,792

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Anansix

USA . 1,697 parts In-Stock

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1,697

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,132 parts In-Stock

1+ parts

$0.164

100+ parts

-

1k+ parts

$0.147

10k+ parts

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1,132

$0.164

-

$0.147

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MKK Technologies

India . 697 parts In-Stock

1+ parts

$0.308

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697

$0.308

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DigiPath Technology Company

USA . 697 parts In-Stock

1+ parts

$0.308

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697

$0.308

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Microchip USA

USA . 7,151 parts In-Stock

1+ parts

$7.467

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7,151

$7.467

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AZTECH Wire

Italy . 1,176 parts In-Stock

1+ parts

$20.410

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1,176

$20.410

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Corphita

USA . 2,466 parts In-Stock

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2,466

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Parana Technologies

USA . 718 parts In-Stock

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$0.196

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718

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$0.196

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Overview

Unlock the potential of your high-voltage power applications with the STPS40150CGY-TR Schottky rectifier from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a robust solution that ensures reliability and efficiency. With its compact design and exceptional performance—like low reverse leakage and high forward current capability—this diode optimizes your circuits while reducing energy loss, making it an ideal choice for automotive and industrial applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making the diode suitable for various high-performance applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with two elements helps in improving circuit design flexibility and simplifies connections in various electronic applications.

Surface Mount: YES

Being surface mount compatible allows for easy integration into compact and densely populated circuit boards, which is essential for modern electronics.

Maximum Reverse Current: 15 uA

A low maximum reverse current indicates efficient performance and minimal energy loss, contributing to improved overall system efficiency.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs and allows for effective heat dissipation during operation.

Reverse Test Voltage: 150 V

A high reverse test voltage rating ensures reliability and suitability for high-voltage applications, reducing the risk of diode breakdown.

No. of Terminals: 2

With only two terminals, the design reduces complexity and makes assembly easier in various electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in minimizing the footprint, making it ideal for compact electronic devices where space is at a premium.

Application: HIGH VOLTAGE POWER

Specifically designed for high voltage power applications, this product ensures high reliability and efficiency in demanding electrical environments.

Minimum Operating Temperature: -40 °C

A wide minimum operating temperature range allows the diode to function reliably in extreme cold conditions, suitable for various applications including automotive and industrial.

Terminal Position: SINGLE

The single terminal position simplifies the layout design on circuit boards, facilitating easier routing and connection.

Case Connection: CATHODE

Having a cathode case connection provides straightforward integration into circuits, ensuring proper functionality when installed correctly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality, making it a trusted choice for automotive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed to convert AC to DC efficiently, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1 V

A low maximum forward voltage drop enhances energy efficiency during operation, reducing heat generation and power loss.

Maximum Output Current: 20 A

Ability to handle up to 20 A of output current makes it suitable for high power applications where strong current support is essential.

Technology: SCHOTTKY

Utilizing Schottky technology allows for faster switching speeds and lower forward voltage drop, making it ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form provides excellent mechanical strength and solderability, ensuring secure mounting on PCBs.

No. of Elements: 2

Having two elements enhances the performance and power handling capabilities of the diode, allowing for more robust circuit designs.

Maximum Repetitive Peak Reverse Voltage: 150 V

The high maximum repetitive peak reverse voltage ensures the diode can withstand significant voltage spikes, thus improving circuit protection.

Maximum Non Repetitive Peak Forward Current: 250 A

The capacity to handle a peak forward current of up to 250 A indicates excellent surge handling capability, essential for transient load conditions.

Diode Element Material: SILICON

Silicon as a diode element material offers a great balance of performance, thermal stability, and cost-effectiveness, making it a widely used semiconductor.

Technical Specifications

Diodes & Rectifiers STPS40150CGY-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

15 uA

Reverse Test Voltage:

150 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS40150CGY-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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