Loading...

STPS40120CR

STMicroelectronics

STPS40120CR by STMicroelectronics

STPS40120CR from STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max forward voltage of 0.61V, supports up to 20A output current, and has a peak reverse voltage of 120V. Its flange mount design ensures easy integration in circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,625 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,625

-

-

-

-

Digiode

USA . 3,942 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,942

-

-

-

-

Anansix

USA . 1,578 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,578

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 301 parts In-Stock

1+ parts

$0.084

100+ parts

-

1k+ parts

$0.075

10k+ parts

-

301

$0.084

-

$0.075

-

MKK Technologies

India . 1,706 parts In-Stock

1+ parts

$0.157

100+ parts

-

1k+ parts

-

10k+ parts

-

1,706

$0.157

-

-

-

DigiPath Technology Company

USA . 1,706 parts In-Stock

1+ parts

$0.157

100+ parts

-

1k+ parts

-

10k+ parts

-

1,706

$0.157

-

-

-

AZTECH Wire

Italy . 192 parts In-Stock

1+ parts

$18.590

100+ parts

-

1k+ parts

-

10k+ parts

-

192

$18.590

-

-

-

Corphita

USA . 4,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,279

-

-

-

-

Parana Technologies

USA . 1,916 parts In-Stock

1+ parts

-

100+ parts

$0.100

1k+ parts

-

10k+ parts

-

1,916

-

$0.100

-

-

Overview

Unlock the power of reliability with the STPS40120CR from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance Schottky rectifier diode offers exceptional efficiency and durability, making it perfect for demanding power applications. With its robust design and superior thermal stability, you can trust that your systems will operate flawlessly, providing lasting value and peace of mind. Choose STMicroelectronics for quality that empowers your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides excellent protection against environmental factors, making the diode reliable in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration enables simpler circuit design and efficient current management, enhancing overall performance.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on the PCB, facilitating compact designs without sacrificing performance.

No. of Terminals: 3

With three terminals, the design provides flexibility for easy integration into various circuit layouts.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures stable and secure installation, which is essential for high-current applications.

Application: POWER

Designed specifically for power applications, this diode can handle high currents, making it ideal for sectors such as automotive and industrial.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and long-term reliability, ensuring optimal electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies the design and assembly process, making it user-friendly for engineers.

Case Connection: CATHODE

The cathode connection minimizes voltage drop and power loss, improving the efficiency of the overall circuit.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, a crucial function in power supply applications.

Maximum Forward Voltage (VF): 0.61 V

The low forward voltage drop reduces energy loss, making this diode an efficient choice for energy-conscious designs.

Maximum Output Current: 20 A

With a maximum output current of 20 A, this diode can handle substantial current loads, suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology ensures fast switching speeds and low reverse leakage current, enhancing performance in high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and make the device easier to solder, ensuring reliable connections.

No. of Elements: 2

Having two elements allows for higher current handling and increased flexibility in circuit design.

Maximum Repetitive Peak Reverse Voltage: 120 V

A peak reverse voltage capability of 120 V makes this diode suitable for a wide range of power applications, preventing breakdown.

Maximum Non-Repetitive Peak Forward Current: 200 A

The high non-repetitive peak forward current rating enables the diode to withstand short bursts of high current, enhancing reliability under transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material provides robust thermal and electrical performance, ensuring long-lasting reliability.

Technical Specifications

Diodes & Rectifiers STPS40120CR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.61 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS40120CR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20