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STPS3L60RL

STMicroelectronics

STPS3L60RL by STMicroelectronics

STMicroelectronics' STPS3L60RL is a Schottky rectifier diode with 60V reverse voltage, 3A output current, and 0.61V forward voltage. It is used in power applications due to its high efficiency and low forward voltage drop. The diode's matte tin finish and isolated case connection make it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,111 parts In-Stock

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3,111

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Anansix

USA . 2,306 parts In-Stock

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2,306

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ComSIT Distribution GmbH

Germany . 1,900 parts In-Stock

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1,900

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Digiode

USA . 1,225 parts In-Stock

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1,225

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Nova Conductors

Japan . 16 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 207 parts In-Stock

1+ parts

$0.010

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207

$0.010

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IDEA Electronic Components Group

UK . 1,064 parts In-Stock

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$0.040

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$0.036

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$0.040

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MKK Technologies

India . 1,360 parts In-Stock

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$0.074

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1,360

$0.074

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DigiPath Technology Company

USA . 1,360 parts In-Stock

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$0.074

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$0.074

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.124

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$0.113

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$0.102

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350

$0.124

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$0.102

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AZTECH Wire

Italy . 431 parts In-Stock

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$17.165

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431

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Kepictronics

USA . 67,800 parts In-Stock

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Perfect Parts

USA . 57,999 parts In-Stock

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Lixinc

USA . 8,524 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 3,800 parts In-Stock

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3,800

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Parana Technologies

USA . 1,932 parts In-Stock

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$0.047

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$0.047

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Continental Prestige Electronics

USA . 1,527 parts In-Stock

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1,527

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

USA . 742 parts In-Stock

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742

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Overview

Experience the next level of power management with the STPS3L60RL by STMicroelectronics. Crafted with precision and expertise, this Schottky rectifier diode offers unmatched quality and reliability for your power applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 60V, this diode ensures optimal performance and efficiency. Trust in STMicroelectronics to deliver cutting-edge technology that meets your power needs, providing you with the value and benefits you deserve. Upgrade your power solutions today with the STPS3L60RL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, making it ideal for applications where weight and reliability are important factors.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC current, making this diode suitable for power applications where a smooth DC output is required.

Maximum Forward Voltage (VF): 0.61 V

With a low forward voltage, this diode has minimal power loss during operation, making it efficient and suitable for high power applications.

Maximum Output Current: 3 A

The high maximum output current capability allows this diode to handle heavy loads, making it suitable for power applications that require high currents.

Technology: SCHOTTKY

Schottky diodes have a lower forward voltage drop and faster switching speed compared to standard diodes, making this diode ideal for high-frequency or high-speed applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

The high maximum repetitive peak reverse voltage allows this diode to handle higher voltages safely, making it suitable for power applications with varying voltage requirements.

Diode Element Material: SILICON

Silicon diodes are widely used in electronics due to their reliability and stability over a wide range of temperatures, making this diode suitable for various environmental conditions.

Technical Specifications

Diodes & Rectifiers STPS3L60RL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE CAPABILITY

Application:

POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.61 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS3L60RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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