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STPS30SM60SR

STMicroelectronics

STPS30SM60SR by STMicroelectronics

STMicroelectronics' STPS30SM60SR is a Schottky rectifier diode with 60V peak reverse voltage and 30A output current. It has a max forward voltage of 0.615V and operates at up to 150 °C. Ideal for efficiency applications, it features a single terminal position in an in-line package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,291 parts In-Stock

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Digiode

USA . 4,241 parts In-Stock

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4,241

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Anansix

USA . 412 parts In-Stock

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412

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Distributors (Availability)

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.067

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$0.061

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$0.055

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450

$0.067

$0.061

$0.055

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IDEA Electronic Components Group

UK . 2,148 parts In-Stock

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$0.107

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$0.096

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$0.107

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MKK Technologies

India . 569 parts In-Stock

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$0.201

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569

$0.201

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DigiPath Technology Company

USA . 569 parts In-Stock

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$0.201

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569

$0.201

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AZTECH Wire

Italy . 86 parts In-Stock

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$16.950

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86

$16.950

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QUARKTWIN TECHNOLOGY LTD

USA . 17,639 parts In-Stock

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Corphita

USA . 3,729 parts In-Stock

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Parana Technologies

USA . 463 parts In-Stock

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$0.128

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463

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Overview

Unlock new possibilities with the STPS30SM60SR by STMicroelectronics. This high-quality rectifier diode offers unmatched efficiency and reliability, making it ideal for a wide range of applications. Whether you're looking to improve power management or enhance performance, this Schottky diode delivers exceptional value and benefits. Trust in STMicroelectronics' reputation for excellence and innovation, and experience the advantages of the STPS30SM60SR for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this diode lightweight and durable, ideal for various applications.

Config: SINGLE

The single configuration simplifies the circuit design and makes it easy to integrate into different systems.

Maximum Reverse Current: 135 uA

Low reverse current ensures minimal power loss and high efficiency in the operation of the diode.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and handling of the diode in different electronic devices.

No. of Terminals: 3

Three terminals provide flexibility in connecting the diode to the circuit, allowing for various configurations.

Package Style (Meter): IN-LINE

The in-line package style offers a compact design and easy installation in tight spaces.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where power conservation is a priority.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection of the diode in the circuit.

Case Connection: CATHODE

The cathode case connection provides a convenient reference point for polarity identification during installation.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC electrical signals, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.615 V

Low forward voltage drop helps in minimizing power loss and heat generation in the diode during operation.

Maximum Output Current: 30 A

High output current rating allows for handling of large electrical loads, making it suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop, making the diode ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures secure and reliable connections to the circuit board, enhancing the diode's performance and lifespan.

Maximum Repetitive Peak Reverse Voltage: 60 V

High repetitive peak reverse voltage rating provides protection against voltage spikes and ensures the diode's longevity in the circuit.

Maximum Non Repetitive Peak Forward Current: 600 A

High non-repetitive peak forward current rating allows the diode to withstand short-duration high current surges without damage.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance and stability, making this diode suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers STPS30SM60SR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.615 V

JESD-30 Code:

R-PSIP-T3

Maximum Non Repetitive Peak Forward Current:

600 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

135 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

STPS30SM60SR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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