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STPS30SM60CG-TR

STMicroelectronics

STPS30SM60CG-TR by STMicroelectronics

STMicroelectronics' STPS30SM60CG-TR is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It has a max reverse voltage of 60V and forward voltage of 0.625V, suitable for efficiency applications in surface mount technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,240 parts In-Stock

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3,240

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Digiode

USA . 2,499 parts In-Stock

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2,499

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Anansix

USA . 465 parts In-Stock

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465

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,319 parts In-Stock

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$0.100

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$0.090

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2,319

$0.100

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$0.090

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MKK Technologies

India . 256 parts In-Stock

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$0.189

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256

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DigiPath Technology Company

USA . 256 parts In-Stock

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$0.189

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256

$0.189

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AZTECH Wire

Italy . 421 parts In-Stock

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$18.770

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421

$18.770

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QUARKTWIN TECHNOLOGY LTD

USA . 8,278 parts In-Stock

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Parana Technologies

USA . 2,244 parts In-Stock

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$0.120

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2,244

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$0.120

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Corphita

USA . 1,884 parts In-Stock

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1,884

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Overview

Enhance the efficiency of your electronic devices with the STPS30SM60CG-TR by STMicroelectronics. This high-quality rectifier diode offers a maximum output current of 15 A and a maximum repetitive peak reverse voltage of 60 V, making it ideal for a wide range of applications. With its common cathode configuration and Schottky technology, this diode ensures reliable performance and low forward voltage. Trust in the expertise of STMicroelectronics to deliver superior products that bring value and benefits to your projects. Upgrade your designs with the STPS30SM60CG-TR and experience enhanced efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to external environmental factors, enhancing the product's reliability and lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow management and easy integration into circuit designs.

Surface Mount: YES

Surface mount capability enables easy and space-efficient PCB integration, simplifying assembly processes.

Maximum Reverse Current: 65 uA

Low maximum reverse current ensures minimal power loss and efficient operation of the diode.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and alignment within circuit layouts, optimizing space utilization.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, reducing the chances of errors during installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Application: EFFICIENCY

Designed for efficiency-focused applications, ensuring high performance and energy-saving operation.

Terminal Position: SINGLE

Single terminal position simplifies the wiring process and ensures correct polarity, enhancing user-friendliness.

Case Connection: CATHODE

Cathode case connection allows for easy identification of the terminal polarity, reducing the risk of incorrect connections.

Diode Type: RECTIFIER DIODE

Rectifier diode type enables effective conversion of AC to DC current, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.625 V

Low forward voltage drop ensures minimal power dissipation and efficient conduction in forward bias.

Maximum Output Current: 15 A

High maximum output current rating allows for handling of large current loads, suitable for power electronics applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low voltage drop, enhancing the diode's performance in high-frequency applications.

Terminal Form: GULL WING

Gull wing terminal form simplifies the surface mounting process and provides mechanical stability during assembly.

No. of Elements: 2

Having 2 elements increases the diode's flexibility and allows for more versatile circuit design options.

Maximum Repetitive Peak Reverse Voltage: 60 V

High repetitive peak reverse voltage rating ensures reliable operation and protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 300 A

High non-repetitive peak forward current capability allows for handling of transient current surges, enhancing the diode's robustness.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and reliability, ensuring consistent performance over a wide temperature range.

Technical Specifications

Diodes & Rectifiers STPS30SM60CG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.625 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

65 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

STPS30SM60CG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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