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STPS30M60CT

STMicroelectronics

STPS30M60CT by STMicroelectronics

STMicroelectronics' STPS30M60CT is a Schottky rectifier diode with 2 elements in common cathode configuration. It has a max forward voltage of 0.59V and output current of 15A, suitable for high-efficiency applications. The diode features a max reverse voltage of 60V and non-repetitive peak forward current of 400A, making it ideal for power electronics designs.

Median Price

$0.262

Lifecycle Status

EOL

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 7,911 parts In-Stock

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$0.275

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$0.250

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$0.249

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$0.249

7,911

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$0.249

Verical

USA . 7,911 parts In-Stock

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-

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$0.250

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$0.249

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$0.249

7,911

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$0.250

$0.249

$0.249

Distributors (In-Stock)

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Digiode

USA . 206 parts In-Stock

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$0.261

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206

$0.261

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Vyrian

USA . 6,620 parts In-Stock

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6,620

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Anansix

USA . 1,490 parts In-Stock

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1,490

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Flip Electronics

USA . 1,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 46 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,243 parts In-Stock

1+ parts

$0.102

100+ parts

-

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$0.092

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2,243

$0.102

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$0.092

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MKK Technologies

India . 1,795 parts In-Stock

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$0.192

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1,795

$0.192

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DigiPath Technology Company

USA . 1,795 parts In-Stock

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$0.192

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$0.192

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Corphita

USA . 4,367 parts In-Stock

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$0.248

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Microchip USA

USA . 334 parts In-Stock

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$9.620

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334

$9.620

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Parana Technologies

USA . 2,010 parts In-Stock

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$0.122

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$0.122

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Perfect Parts

USA . 1,081 parts In-Stock

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Overview

Upgrade your electronic devices with the STPS30M60CT diode by STMicroelectronics, a high-quality component designed for efficiency applications. With a maximum output current of 15 A and a low forward voltage of 0.59 V, this Schottky rectifier diode offers superior performance and reliability. STMicroelectronics is known for its cutting-edge technology and innovative solutions, making this diode a dependable choice for your projects. Experience the benefits of improved power management and increased system efficiency with the STPS30M60CT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and insulation, making the diode more reliable in various operating conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows the diode to handle higher currents and voltages efficiently.

Maximum Reverse Current: 80 uA

Low maximum reverse current ensures minimal power loss and enhances the overall efficiency of the circuit.

Package Shape: RECTANGULAR

Rectangular package shape allows for easier mounting and installation in a variety of electronic devices.

No. of Terminals: 3

3 terminals provide a secure connection and stable operation of the diode within the circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy integration into existing electronic systems and equipment.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where energy conservation is a priority.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good conductivity and solderability, enhancing the overall performance of the diode.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures proper alignment within the circuit.

Case Connection: CATHODE

Cathode case connection simplifies the circuit design and provides a common reference point for the diode operation.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient rectification of AC to DC current, making it suitable for power conversion applications.

Maximum Forward Voltage (VF): 0.59 V

Low maximum forward voltage drop minimizes power dissipation and heat generation, improving the efficiency of the diode.

Maximum Output Current: 15 A

High maximum output current rating allows the diode to handle large current flows without overheating or failing.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop, ideal for high-frequency and high-efficiency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides mechanical strength and reliability for secure PCB mounting and soldering.

No. of Elements: 2

Two elements design allows for increased current carrying capacity and better heat dissipation in high-power applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage rating ensures reliable operation in reverse biased conditions without breakdown.

Maximum Non Repetitive Peak Forward Current: 400 A

High maximum non-repetitive peak forward current rating allows the diode to handle short-duration overcurrent conditions without damage.

Diode Element Material: SILICON

Silicon diode element material provides stable and consistent performance over a wide range of temperatures and operating conditions.

Technical Specifications

Diodes & Rectifiers STPS30M60CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.59 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

80 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS30M60CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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