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STPS30M60CR

STMicroelectronics

STPS30M60CR by STMicroelectronics

STMicroelectronics' STPS30M60CR is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It has a max repetitive peak reverse voltage of 60V and forward voltage of 0.59V. Ideal for applications requiring high efficiency due to its low forward voltage drop.

Median Price

$1.358

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,382 parts In-Stock

1+ parts

$1.358

100+ parts

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3,382

$1.358

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Vyrian

USA . 7,910 parts In-Stock

1+ parts

-

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7,910

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Anansix

USA . 1,845 parts In-Stock

1+ parts

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1,845

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 807 parts In-Stock

1+ parts

$0.145

100+ parts

-

1k+ parts

$0.131

10k+ parts

-

807

$0.145

-

$0.131

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MKK Technologies

India . 336 parts In-Stock

1+ parts

$0.273

100+ parts

-

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336

$0.273

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DigiPath Technology Company

USA . 336 parts In-Stock

1+ parts

$0.273

100+ parts

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336

$0.273

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Corphita

USA . 392 parts In-Stock

1+ parts

$1.287

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392

$1.287

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Microchip USA

USA . 6,985 parts In-Stock

1+ parts

$8.320

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6,985

$8.320

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QUARKTWIN TECHNOLOGY LTD

USA . 20,069 parts In-Stock

1+ parts

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20,069

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Parana Technologies

USA . 327 parts In-Stock

1+ parts

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100+ parts

$0.174

1k+ parts

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327

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$0.174

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Overview

Enhance the efficiency of your electronic devices with the STPS30M60CR diode by STMicroelectronics. With a maximum output current of 15A and a maximum repetitive peak reverse voltage of 60V, this Schottky rectifier diode is designed to deliver superior performance and reliability. Manufactured with high-quality materials and cutting-edge technology, this product offers exceptional value for a wide range of applications where efficiency is key. Upgrade your electronics today with the STPS30M60CR and experience the benefits of top-tier quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring longevity and reliability in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration into circuits and systems requiring common cathode configuration with 2 elements.

Maximum Reverse Current: 80 uA

Low reverse current ensures efficient performance and minimizes power loss in the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in compact spaces.

No. of Terminals: 3

Provides multiple connection points for flexible application and secure connections.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers stability and heat dissipation advantages for improved efficiency.

Application: EFFICIENCY

Designed specifically for efficiency, making it ideal for applications where energy conservation is a priority.

Terminal Finish: Matte Tin (Sn)

Matte tin finish ensures good conductivity, corrosion resistance, and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection process, reducing chances of error.

Case Connection: CATHODE

Cathode case connection provides a common reference point for the diode, facilitating circuit design and troubleshooting.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC power, suitable for various rectification applications.

Maximum Forward Voltage (VF): 0.59 V

Low forward voltage drop ensures minimal power loss and high efficiency in forward conduction mode.

Maximum Output Current: 15 A

High output current rating supports heavy load applications with reliable performance.

Technology: SCHOTTKY

Schottky technology offers fast switching speed, low voltage drop, and reduced power dissipation for high frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals enable secure mounting on circuit boards, ensuring mechanical stability and easy soldering.

No. of Elements: 2

Dual diode elements provide redundancy and improved current handling capability for enhanced reliability.

Maximum Repetitive Peak Reverse Voltage: 60 V

High reverse voltage rating offers protection against reverse bias conditions, ensuring safe operation in various scenarios.

Maximum Non Repetitive Peak Forward Current: 400 A

High non-repetitive peak forward current rating allows the diode to withstand short-term surges and overloads without damage.

Diode Element Material: SILICON

Silicon material offers good thermal stability, voltage handling capacity, and reliability for long-term performance.

Technical Specifications

Diodes & Rectifiers STPS30M60CR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.59 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

80 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

STPS30M60CR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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