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STPS3030CR

STMicroelectronics

STPS3030CR by STMicroelectronics

STPS3030CR by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.42V and supports up to 15A output current. Its common cathode configuration ensures efficient performance in power applications. Designed for flange mount, it features a durable plastic/epoxy package.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,647 parts In-Stock

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Microfarads

USA . 2,366 parts In-Stock

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2,366

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Digiode

USA . 1,967 parts In-Stock

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1,967

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Bristol Electronics

USA . 850 parts In-Stock

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850

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Dan-Mar Components

USA . 850 parts In-Stock

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850

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Anansix

USA . 812 parts In-Stock

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Sunrise Surplus Inc.

USA . 386 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,289 parts In-Stock

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$0.071

100+ parts

-

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$0.064

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1,289

$0.071

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$0.064

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MKK Technologies

India . 2,078 parts In-Stock

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$0.133

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DigiPath Technology Company

USA . 2,078 parts In-Stock

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$0.133

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$0.133

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$0.140

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$0.127

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$0.115

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20

$0.140

$0.127

$0.115

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AZTECH Wire

Italy . 1,215 parts In-Stock

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$17.070

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$17.070

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Corphita

USA . 4,219 parts In-Stock

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Perfect Parts

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Parana Technologies

USA . 1,619 parts In-Stock

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$0.085

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1,619

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$0.085

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Overview

Unlock unparalleled efficiency with the STPS3030CR Schottky rectifier from STMicroelectronics. Renowned for its commitment to quality and innovation, STMicroelectronics delivers a diode that enhances performance across various applications, ensuring smoother operations and reduced energy loss. With a robust design, this versatile component offers exceptional reliability, making it an ideal choice for power management and energy conversion solutions. Elevate your projects with superior efficiency and trust in ST's expertise!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures longevity and reliability, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for simplified circuit design and efficient load sharing between diodes.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, facilitating space-saving in circuit boards.

No. of Terminals: 3

The three-terminal design allows for easier integration into various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers secure mounting options, enhancing reliability in physical installations.

Application: EFFICIENCY

Designed for efficiency, this diode minimizes power loss during operation, improving overall system performance.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and corrosion resistance, ensuring a dependable connection.

Terminal Position: SINGLE

The single terminal position allows for straightforward installation, reducing assembly complexity.

Case Connection: CATHODE

A cathode connection is conducive for applications requiring stable performance under forward-biased conditions.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, essential for power supply applications.

Maximum Forward Voltage (VF): 0.42 V

A low forward voltage drop improves energy efficiency, minimizing heat generation during operation.

Maximum Output Current: 15 A

With a maximum output current of 15 A, this diode can easily handle substantial load requirements.

Technology: SCHOTTKY

Schottky technology enables faster switching speeds and lower voltage drops, enhancing overall circuit efficiency.

Terminal Form: THROUGH-HOLE

Through-hole technology ensures a robust connection to the PCB, beneficial for high-stress applications.

No. of Elements: 2

Having two elements allows for more versatile outputs and improved performance in various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

A peak reverse voltage rating of 30 V ensures reliability in high-voltage applications, enhancing circuit protection.

Maximum Non Repetitive Peak Forward Current: 250 A

With a high peak forward current rating, this diode is capable of handling transient loads, making it ideal for dynamic applications.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures excellent electrical performance and thermal stability.

Technical Specifications

Diodes & Rectifiers STPS3030CR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.42 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS3030CR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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