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STPS2L25AFN

STMicroelectronics

STPS2L25AFN by STMicroelectronics

STPS2L25AFN by STMicroelectronics is a Schottky rectifier diode designed for efficiency, featuring a max reverse voltage of 25V and forward current of 2A. It operates at up to 150 °C with a low forward voltage drop of 0.53V. Ideal for compact surface mount applications.

Median Price

$0.361

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 3 parts In-Stock

1+ parts

$0.361

100+ parts

-

1k+ parts

-

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3

$0.361

-

-

-

DigiKey

USA . 26 parts In-Stock

1+ parts

$0.370

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

26

$0.370

-

-

$0.086

Element14

Singapore . 28 parts In-Stock

1+ parts

-

100+ parts

$0.272

1k+ parts

$0.216

10k+ parts

$0.212

28

-

$0.272

$0.216

$0.212

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,099 parts In-Stock

1+ parts

$0.332

100+ parts

-

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4,099

$0.332

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Vyrian

USA . 6,489 parts In-Stock

1+ parts

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6,489

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Anansix

USA . 1,756 parts In-Stock

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1,756

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 853 parts In-Stock

1+ parts

$0.028

100+ parts

-

1k+ parts

$0.025

10k+ parts

-

853

$0.028

-

$0.025

-

MKK Technologies

India . 2,066 parts In-Stock

1+ parts

$0.052

100+ parts

-

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2,066

$0.052

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DigiPath Technology Company

USA . 2,066 parts In-Stock

1+ parts

$0.052

100+ parts

-

1k+ parts

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2,066

$0.052

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Corphita

USA . 2,826 parts In-Stock

1+ parts

$0.315

100+ parts

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2,826

$0.315

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Continental Prestige Electronics

USA . 418 parts In-Stock

1+ parts

$0.351

100+ parts

$0.172

1k+ parts

$0.133

10k+ parts

-

418

$0.351

$0.172

$0.133

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Kepictronics

USA . 8,000 parts In-Stock

1+ parts

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8,000

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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8,000

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Parana Technologies

USA . 186 parts In-Stock

1+ parts

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100+ parts

$0.033

1k+ parts

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10k+ parts

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186

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$0.033

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Overview

Unlock exceptional performance with the STPS2L25AFN Schottky rectifier diode from STMicroelectronics, a leader in semiconductor innovation. Designed for efficiency and reliability, this compact solution ensures optimal power management in diverse applications—from renewable energy systems to consumer electronics. With superior thermal resistance and low forward voltage, it enhances energy savings while maintaining robust functionality. Trust STMicroelectronics to elevate your designs with unparalleled quality and support!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and resistance to environmental factors, making the diode suitable for various applications.

Config: SINGLE

A single configuration allows for a compact design, making integration into circuits simpler and more efficient.

Surface Mount: YES

Surface-mount capability provides ease of manufacturing and assembly, allowing for high-density PCB designs and reduced space requirements.

Maximum Reverse Current: 90 uA

Low reverse current ensures reduced power loss and improved efficiency in rectification applications.

Package Shape: RECTANGULAR

The rectangular shape is optimal for heat dissipation and efficient use of board space.

Reverse Test Voltage: 25 V

A robust reverse test voltage enhances reliability under reverse bias conditions, ensuring the diode performs well in demanding scenarios.

No. of Terminals: 2

Having two terminals simplifies circuit design and is standard for most rectifier applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is perfect for compact designs, enabling more efficient use of space on PCBs.

Application: EFFICIENCY

Designed with efficiency in mind, this diode is an excellent choice for applications where power conservation is critical.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures that the diode can perform in harsh environments without failure.

Terminal Position: DUAL

Dual terminal position enhances the flexibility in circuit design, allowing for varied layouts in PCB assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for converting AC to DC, making it indispensable in power supply applications.

Maximum Forward Voltage (VF): 0.53 V

A low forward voltage drop signifies higher efficiency and less heat generation during operation, improving overall performance.

Maximum Output Current: 2 A

This diode supports a maximum output current of 2 A, making it suitable for a wide range of electronic applications.

Technology: SCHOTTKY

Using Schottky technology provides faster switching speeds and lower forward voltage drops, enhancing energy efficiency.

Terminal Form: FLAT

Flat terminals facilitate better surface contact, which can lead to improved thermal performance and connectivity.

Maximum Repetitive Peak Reverse Voltage: 25 V

A maximum repetitive peak reverse voltage of 25 V ensures the diode can handle high-voltage situations effectively.

Maximum Non Repetitive Peak Forward Current: 90 A

The ability to handle high peak forward currents makes this diode robust, capable of withstanding transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material contributes to its effectiveness and reliability in various electrical applications.

Technical Specifications

Diodes & Rectifiers STPS2L25AFN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.53 V

JESD-30 Code:

R-PDSO-F2

Maximum Non Repetitive Peak Forward Current:

90 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

25 V

Maximum Reverse Current:

90 uA

Reverse Test Voltage:

25 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS2L25AFN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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