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STPS20L60CTN

STMicroelectronics

STPS20L60CTN by STMicroelectronics

STMicroelectronics' STPS20L60CTN is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 60V. Ideal for power applications, it has a max forward voltage of 0.74V and can handle non-repetitive peak forward current up to 220A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,126 parts In-Stock

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Anansix

USA . 2,799 parts In-Stock

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2,799

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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2,000

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Digiode

USA . 1,638 parts In-Stock

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IDEA Electronic Components Group

UK . 1,940 parts In-Stock

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$0.047

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$0.042

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1,940

$0.047

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$0.042

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MKK Technologies

India . 1,071 parts In-Stock

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$0.088

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1,071

$0.088

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DigiPath Technology Company

USA . 1,071 parts In-Stock

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$0.088

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1,071

$0.088

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AZTECH Wire

Italy . 1,163 parts In-Stock

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$15.600

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1,163

$15.600

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 4,070 parts In-Stock

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Parana Technologies

USA . 2,099 parts In-Stock

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$0.056

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2,099

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$0.056

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Overview

Experience the superior performance and reliability of STMicroelectronics with the STPS20L60CTN diode. This high-quality product is perfect for power applications, offering customers unmatched value and benefits. With its common cathode configuration and Schottky technology, this diode provides efficient power management and optimal performance. Trust in STMicroelectronics to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, ensuring a long lifespan for the product.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient power handling and easy integration into circuits.

Maximum Reverse Current: 350 uA

Low reverse current of 350 uA indicates minimal power loss and improved efficiency in the circuit.

Package Shape: RECTANGULAR

Rectangular package shape provides ease of mounting and space-saving design for compact electronic devices.

No. of Terminals: 3

3 terminals allow for secure connections and stable operation of the diodes in the circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers convenient installation and secure mounting in various power applications.

Application: POWER

Designed for power applications, this diode is capable of handling high currents and voltages efficiently.

Terminal Position: SINGLE

Single terminal position ensures simplified wiring and connection setup for easy integration into circuits.

Case Connection: CATHODE

Cathode case connection allows for efficient heat dissipation and reliable operation of the diode.

Diode Type: RECTIFIER DIODE

Rectifier diode type enables the conversion of alternating current (AC) to direct current (DC) with high efficiency.

Maximum Forward Voltage (VF): 0.74 V

Low forward voltage drop of 0.74 V results in reduced power losses and improved energy efficiency in the circuit.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low voltage drops, making it ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and reliable connections for the diodes, ensuring stable operation in the circuit.

No. of Elements: 2

2 elements offer redundancy and increased current handling capacity for enhanced reliability in power circuits.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage of 60 V guarantees reliable operation and protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 220 A

High maximum non repetitive peak forward current of 220 A allows for robust power handling capabilities in transient conditions.

Diode Element Material: SILICON

Silicon diode element material provides high conductivity and temperature stability for efficient operation in power circuits.

Technical Specifications

Diodes & Rectifiers STPS20L60CTN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.74 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

350 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

STPS20L60CTN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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