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STPS20L45CG

STMicroelectronics

STPS20L45CG by STMicroelectronics

STPS20L45CG by STMicroelectronics is a Schottky rectifier diode designed for power applications. It features a max output current of 10 A, a peak reverse voltage of 45 V, and a low forward voltage drop of 0.5 V. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

$0.464

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,854 parts In-Stock

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Anansix

USA . 1,995 parts In-Stock

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Digiode

USA . 1,745 parts In-Stock

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1,745

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Bristol Electronics

USA . 245 parts In-Stock

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$0.464

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$0.396

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245

-

$0.464

$0.396

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Dan-Mar Components

USA . 245 parts In-Stock

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245

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 45 parts In-Stock

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45

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ECAB

Sweden . 25 parts In-Stock

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Pegasus Components GmbH

Germany . 17 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 7 parts In-Stock

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$0.165

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$0.148

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7

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$0.148

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MKK Technologies

India . 1,812 parts In-Stock

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$0.310

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DigiPath Technology Company

USA . 1,812 parts In-Stock

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$0.310

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$0.310

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AZTECH Wire

Italy . 1,193 parts In-Stock

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$20.240

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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Corphita

USA . 1,712 parts In-Stock

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Kepictronics

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Parana Technologies

USA . 304 parts In-Stock

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$0.197

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Perfect Parts

USA . 97 parts In-Stock

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Overview

Unlock exceptional performance with the STPS20L45CG from STMicroelectronics, a leader in innovation and reliability. This high-efficiency Schottky rectifier diode is designed for power applications, offering superior thermal management and minimal forward voltage drop. Its compact surface mount design ensures easy integration, making it ideal for modern electronics. Choose STMicroelectronics for unmatched quality, proven durability, and the peace of mind your projects deserve!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures excellent insulation properties and durability, making the diode reliable in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for efficient design in circuits where multiple diodes are needed, improving overall performance.

Surface Mount: YES

Surface mount capability enables compact circuit designs and simplifies the manufacturing process with automated assembly.

Package Shape: RECTANGULAR

The rectangular shape provides an optimized footprint for space-constrained applications while ensuring proper heat dissipation.

No. of Terminals: 2

With only two terminals, the diode simplifies the circuitry, making it easy to integrate into various designs.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for high-density mounting, ideal for applications where space is at a premium.

Application: POWER

Designed for power applications, this diode is highly suitable for handling significant current flows and improving efficiency.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and corrosion resistance, enhancing long-term reliability in connections.

Terminal Position: SINGLE

Having a single terminal position aids in reducing errors during assembly and ensures easy connections in circuit designs.

Case Connection: CATHODE

Cathode connection is ideal for certain applications, ensuring that current flows in the desired direction for optimal circuit performance.

Maximum Time At Peak Reflow Temperature: 30 s

The maximum reflow time of 30 seconds allows for effective soldering without damaging the components, ensuring quality connections.

Peak Reflow Temperature: 245 C

Operating at a peak reflow temperature of 245 °C ensures compatibility with standard SMT processes, enhancing manufacturing flexibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, making it suitable for power supply and conversion applications.

Maximum Forward Voltage (VF): 0.5 V

A low forward voltage drop of 0.5V contributes to higher efficiency in the circuit, minimizing energy loss during operation.

Maximum Output Current: 10 A

With a capacity to handle 10 A, this diode can support significant current loads, making it suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage, enhancing performance in high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy handling and secure soldering, improving assembly efficiency and reliability.

No. of Elements: 2

Having two elements allows for enhanced performance in rectification and improved overall circuit efficiency.

Maximum Repetitive Peak Reverse Voltage: 45 V

A high peak reverse voltage rating of 45V ensures the diode can withstand significant reverse voltages without failure.

Maximum Non Repetitive Peak Forward Current: 180 A

The ability to handle up to 180 A of non-repetitive forward current makes this diode robust for transient conditions, providing reliability.

Diode Element Material: SILICON

Silicon as the diode element material enhances its performance and reliability, making it effective in a wide range of applications.

Technical Specifications

Diodes & Rectifiers STPS20L45CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREEWHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS20L45CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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