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STPS20200CTN

STMicroelectronics

STPS20200CTN by STMicroelectronics

STMicroelectronics STPS20200CTN is a Schottky rectifier diode with 200V reverse voltage and 0.86V forward voltage. Common cathode, 2 elements design in plastic/epoxy package for fast recovery power applications. Features 15uA max reverse current and 180A non-repetitive peak forward current.

Median Price

$2.030

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 1,000 parts In-Stock

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$2.030

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$2.030

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Vyrian

USA . 3,239 parts In-Stock

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Anansix

USA . 1,211 parts In-Stock

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IBS Electronics

USA . 1,000 parts In-Stock

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$2.847

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Euro-Tech

UK . 665 parts In-Stock

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Digiode

USA . 374 parts In-Stock

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Nova Conductors

Japan . 88 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,345 parts In-Stock

1+ parts

$0.063

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-

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$0.057

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$0.063

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$0.057

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MKK Technologies

India . 1,659 parts In-Stock

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$0.119

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$0.119

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DigiPath Technology Company

USA . 1,659 parts In-Stock

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$0.119

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$0.119

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Aztec Data Supply Inc.

USA . 1,782 parts In-Stock

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$0.130

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Ampacity Inc.

Singapore . 753 parts In-Stock

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$1.730

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$1.730

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Semicontronic

India . 528 parts In-Stock

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$1.730

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$1.687

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$1.678

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528

$1.730

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$1.678

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Corohmni

South Africa . 654 parts In-Stock

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AZTECH Wire

Italy . 276 parts In-Stock

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$13.810

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Corphita

USA . 3,299 parts In-Stock

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Argo Parts USA

USA . 3,145 parts In-Stock

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Perfect Parts

USA . 2,106 parts In-Stock

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Continental Prestige Electronics

USA . 527 parts In-Stock

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Parana Technologies

USA . 133 parts In-Stock

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$0.076

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Aranea Global

USA . 50 parts In-Stock

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Overview

Experience the superior quality and reliability of the STPS20200CTN diode by STMicroelectronics. With a common cathode configuration and fast recovery power application, this device offers unparalleled performance in a variety of electronic systems. Its Schottky technology ensures efficient power management, while its durable plastic/epoxy body guarantees long-lasting functionality. Trust in STMicroelectronics to deliver cutting-edge solutions for your electronics needs. Choose the STPS20200CTN diode for optimal performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Allows for durable and lightweight construction, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Provides efficient current flow and easy integration into circuits.

Maximum Reverse Current: 15 uA

Ensures minimal power loss and enhances overall efficiency of the diode.

Package Shape: RECTANGULAR

Facilitates easy mounting and space-saving design.

No. of Terminals: 3

Offers flexibility in connecting the diode within a circuit.

Package Style (Meter): FLANGE MOUNT

Enables secure and stable installation in a variety of electrical systems.

Application: FAST RECOVERY POWER

Ideal for applications requiring quick power recovery and high efficiency.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme temperature environments without performance issues.

Terminal Position: SINGLE

Simplifies installation and connection within a circuit.

Case Connection: CATHODE

Facilitates efficient flow of current within the diode.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying current and voltage in electrical circuits.

Maximum Forward Voltage (VF): 0.86 V

Delivers minimal voltage drop across the diode, enhancing efficiency.

Technology: SCHOTTKY

Utilizes advanced technology for improved performance and lower power loss.

Terminal Form: THROUGH-HOLE

Allows for secure and reliable connection within a circuit board.

No. of Elements: 2

Provides dual functionality within a single diode, maximizing efficiency.

Maximum Repetitive Peak Reverse Voltage: 200 V

Capable of handling high voltage applications with ease.

Maximum Non Repetitive Peak Forward Current: 180 A

Suited for high power applications requiring peak current handling.

Diode Element Material: SILICON

Utilizes high quality silicon material for reliability and durability.

Technical Specifications

Diodes & Rectifiers STPS20200CTN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.86 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

15 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS20200CTN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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