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STPS16H100CG

STMicroelectronics

STPS16H100CG by STMicroelectronics

STPS16H100CG by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max repetitive peak reverse voltage of 100V, an output current of 8A, and operates at a peak reflow temp of 245 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,685 parts In-Stock

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4,685

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Digiode

USA . 342 parts In-Stock

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342

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Anansix

USA . 293 parts In-Stock

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293

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Pegasus Components GmbH

Germany . 100 parts In-Stock

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100

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Electronics Depot

USA . 100 parts In-Stock

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100

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IDEA Electronic Components Group

UK . 2,034 parts In-Stock

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$0.138

100+ parts

-

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$0.124

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2,034

$0.138

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$0.124

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MKK Technologies

India . 1,498 parts In-Stock

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$0.260

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1,498

$0.260

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DigiPath Technology Company

USA . 1,498 parts In-Stock

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$0.260

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1,498

$0.260

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AZTECH Wire

Italy . 580 parts In-Stock

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$13.690

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580

$13.690

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Component Stockers USA

USA . 528 parts In-Stock

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$99.990

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528

$99.990

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RC Electronics

USA . 6,300 parts In-Stock

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6,300

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Corphita

USA . 1,928 parts In-Stock

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Kepictronics

USA . 1,400 parts In-Stock

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1,400

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Parana Technologies

USA . 1,002 parts In-Stock

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$0.165

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1,002

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$0.165

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Overview

Unlock the power of efficiency with the STPS16H100CG from STMicroelectronics, a leader in innovative semiconductor solutions. This high-performance Schottky rectifier diode is designed for high-voltage power applications, ensuring reliability and superior performance. With its compact surface mount design and exceptional current handling capabilities, it delivers unmatched value, making it ideal for modern electronic systems. Elevate your projects with STMicroelectronics' commitment to quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy offers excellent protection against moisture and mechanical stress, enhancing the durability and reliability of the diode.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for easier integration in circuit designs, particularly in full-wave and half-wave rectification applications.

Surface Mount: YES

Being surface mountable allows for compact design layouts, improving space efficiency on printed circuit boards (PCBs).

Package Shape: RECTANGULAR

The rectangular shape aids in ensuring proper fitting and alignment in automated assembly processes.

No. of Terminals: 2

Having only two terminals simplifies connections in designs, making installation and maintenance easier.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for high-density applications where space is limited.

Application: HIGH VOLTAGE POWER

Designed for high voltage power applications, ensuring it can handle demanding electrical environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and corrosion resistance, contributing to the longevity of connections.

Terminal Position: SINGLE

The single terminal position helps streamline designs while reducing the complexity of routing on PCBs.

Case Connection: CATHODE

Having a cathode connection provides straightforward integration into common diode configurations, enhancing circuit design simplicity.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum exposure time of 30 seconds at peak temperature ensures that the junction remains safe during assembly process.

Peak Reflow Temperature: 245 C

A peak reflow temperature of 245 °C allows for compatibility with standard surface mount soldering techniques.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for efficient current rectification in power applications.

Maximum Forward Voltage (VF): 0.64 V

A low forward voltage drop ensures higher efficiency and less power loss, making it suitable for energy-sensitive applications.

Maximum Output Current: 8 A

With a maximum output current of 8 A, this diode is capable of handling substantial power loads suitable for demanding applications.

Technology: SCHOTTKY

Using Schottky technology results in faster switching speeds and lower forward voltage drop than conventional diodes.

Terminal Form: GULL WING

The gull wing terminal form maximizes the solder joint contact area, ensuring reliable connections to the PCB.

No. of Elements: 2

The presence of two elements allows for more versatile circuit applications, including full-wave rectification.

Maximum Repetitive Peak Reverse Voltage: 100 V

A high reverse voltage rating of 100 V enhances its suitability for various applications where voltage spikes may occur.

Maximum Non Repetitive Peak Forward Current: 200 A

The ability to handle a peak forward current of 200 A indicates robustness under surge conditions, protecting against unexpected load conditions.

Diode Element Material: SILICON

Silicon as a diode element material contributes to the reliability and durability required in power applications.

Technical Specifications

Diodes & Rectifiers STPS16H100CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.64 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS16H100CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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