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STPS16170CG

STMicroelectronics

STPS16170CG by STMicroelectronics

STPS16170CG by STMicroelectronics is a Schottky rectifier diode ideal for high voltage power applications. It features a max output current of 8 A, a peak reverse voltage of 170 V, and a forward voltage drop of just 0.75 V. Its compact surface mount design ensures efficient space utilization in circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,104 parts In-Stock

1+ parts

-

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8,104

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Digiode

USA . 2,424 parts In-Stock

1+ parts

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2,424

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Anansix

USA . 1,397 parts In-Stock

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1,397

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 592 parts In-Stock

1+ parts

$0.081

100+ parts

-

1k+ parts

$0.073

10k+ parts

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592

$0.081

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$0.073

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MKK Technologies

India . 328 parts In-Stock

1+ parts

$0.152

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328

$0.152

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DigiPath Technology Company

USA . 328 parts In-Stock

1+ parts

$0.152

100+ parts

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328

$0.152

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AZTECH Wire

Italy . 1,071 parts In-Stock

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$15.530

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1,071

$15.530

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Corphita

USA . 2,985 parts In-Stock

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2,985

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 780 parts In-Stock

1+ parts

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100+ parts

$0.097

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780

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$0.097

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Overview

Unlock the power of efficiency with the STPS16170CG from STMicroelectronics, a leader in semiconductor innovation. This high-performance Schottky rectifier diode excels in high-voltage power applications, ensuring reliable operation even under demanding conditions. With superior thermal management and compact design, it maximizes your system's performance while minimizing heat loss. Trust STMicroelectronics for unparalleled quality and reliability that drives your success forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection against environmental factors, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

A common cathode configuration with two elements provides flexibility for circuit design, allowing for efficient current flow and reduced layout complexity.

Surface Mount: YES

Surface mount technology allows for higher component density, improved thermal performance, and is ideal for automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape is optimized for space-saving on PCB layouts, making it easy to incorporate into a variety of designs.

No. of Terminals: 2

Having two terminals simplifies connections and integration into circuits while maintaining performance reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style is compact and lightweight, ideal for modern electronic devices where space is at a premium.

Application: HIGH VOLTAGE POWER

Designed for high voltage power applications, this diode ensures reliable performance in demanding electrical environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability, ensuring secure connections and long-lasting reliability in assembly.

Terminal Position: SINGLE

A single terminal position enhances ease of use in circuit design and simplifies the physical layout on PCBs.

Case Connection: CATHODE

The cathode connection ensures that the diode meets the needs of specific circuit configurations effectively, enhancing design flexibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component efficiently converts alternating current (AC) to direct current (DC), which is essential in power supply applications.

Maximum Forward Voltage (VF): 0.75 V

A low maximum forward voltage drop increases energy efficiency in circuits, reducing power loss during operation.

Maximum Output Current: 8 A

With a maximum output current of 8 A, this diode can handle considerable load, making it effective for applications requiring robust current handling.

Technology: SCHOTTKY

The Schottky technology provides faster switching speeds and lower forward voltage drops, which enhances overall efficiency in high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improved mechanical strength, enhancing the long-term performance of the component.

No. of Elements: 2

Two diode elements contribute to enhanced current handling capabilities, providing lower resistance and better thermal management.

Maximum Repetitive Peak Reverse Voltage: 170 V

A high repetitive peak reverse voltage rating ensures the diode can withstand significant voltage stress, making it suitable for demanding applications.

Maximum Non Repetitive Peak Forward Current: 75 A

The ability to handle non-repetitive peak forward currents of up to 75 A makes this diode resilient under surge conditions, increasing reliability.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent thermal stability and performance, ensuring efficient operation in diverse environments.

Technical Specifications

Diodes & Rectifiers STPS16170CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

170 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS16170CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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