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STPS16170CB

STMicroelectronics

STPS16170CB by STMicroelectronics

STPS16170CB by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max output current of 8 A, a peak reverse voltage of 170 V, and a low forward voltage drop of 0.75 V. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,822 parts In-Stock

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5,822

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Digiode

USA . 4,928 parts In-Stock

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4,928

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Anansix

USA . 884 parts In-Stock

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884

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Goldney Electronics S.L.

Spain . 86 parts In-Stock

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86

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,309 parts In-Stock

1+ parts

$0.105

100+ parts

-

1k+ parts

$0.094

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1,309

$0.105

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$0.094

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MKK Technologies

India . 1,473 parts In-Stock

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$0.197

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1,473

$0.197

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DigiPath Technology Company

USA . 1,473 parts In-Stock

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$0.197

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1,473

$0.197

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AZTECH Wire

Italy . 914 parts In-Stock

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$15.150

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914

$15.150

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Parana Technologies

USA . 2,249 parts In-Stock

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$0.125

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2,249

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$0.125

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Corphita

USA . 732 parts In-Stock

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732

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Overview

Elevate your designs with the STPS16170CB Schottky diode from STMicroelectronics, a trusted leader in semiconductor solutions. This high-performance component delivers exceptional efficiency and reliability for high voltage power applications. Its compact surface mount design ensures seamless integration while providing robust performance in demanding environments. Choose STMicroelectronics for quality you can count on and unlock the potential of your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Utilizing durable plastic and epoxy materials ensures robust protection and reliability for the diode in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration provides flexibility in circuit design, allowing for efficient connection options in high voltage power applications.

Surface Mount: YES

The surface mount capability facilitates easier integration and assembly in compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, making it suitable for space-constrained designs.

No. of Terminals: 2

Having just two terminals simplifies the layout and makes it easy to install in various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to its compactness, ideal for modern electronic devices that require space efficiency.

Application: HIGH VOLTAGE POWER

Designed specifically for high voltage power applications, this diode ensures high performance and reliability under demanding conditions.

Terminal Finish: MATTE TIN

Matte tin finish on terminals enhances solderability and protects against oxidation, ensuring reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies the mounting and connection process, improving ease of installation.

Case Connection: CATHODE

The cathode case connection ensures compatibility with standard circuit designs, streamlining implementation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), making it essential for power conversion applications.

Maximum Forward Voltage (VF): 0.75 V

A low maximum forward voltage drop increases efficiency and reduces heat generation, leading to better overall performance.

Maximum Output Current: 8 A

The capability to handle a maximum output current of 8 A allows this diode to support high current applications without overheating.

Technology: SCHOTTKY

Featuring Schottky technology, it ensures fast switching speeds and low forward voltage drop, enhancing overall circuit efficiency.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical stability and easy handling during assembly processes.

No. of Elements: 2

The presence of two elements allows for better current handling and improved performance in circuit designs.

Maximum Repetitive Peak Reverse Voltage: 170 V

Ability to withstand up to 170 V of reverse voltage makes it suitable for high voltage applications, ensuring component reliability.

Maximum Non Repetitive Peak Forward Current: 75 A

A high tolerance for non-repetitive peak forward current (75 A) allows for safety during transient events, protecting circuit integrity.

Diode Element Material: SILICON

Using silicon as the diode element material ensures high performance, reliability, and efficiency across various applications.

Technical Specifications

Diodes & Rectifiers STPS16170CB attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

170 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS16170CB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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