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STPS16150CG-TR

STMicroelectronics

STPS16150CG-TR by STMicroelectronics

STPS16150CG-TR by STMicroelectronics is a Schottky rectifier diode ideal for high voltage power applications. It features a max forward voltage of 0.75V, supports up to 8A output current, and has a peak reverse voltage of 150V. Its compact surface mount design ensures efficient performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,006 parts In-Stock

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8,006

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Anansix

USA . 2,457 parts In-Stock

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2,457

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Digiode

USA . 802 parts In-Stock

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802

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 909 parts In-Stock

1+ parts

$0.032

100+ parts

-

1k+ parts

$0.029

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909

$0.032

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$0.029

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MKK Technologies

India . 207 parts In-Stock

1+ parts

$0.061

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207

$0.061

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DigiPath Technology Company

USA . 207 parts In-Stock

1+ parts

$0.061

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207

$0.061

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AZTECH Wire

Italy . 404 parts In-Stock

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$10.600

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404

$10.600

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QUARKTWIN TECHNOLOGY LTD

USA . 25,422 parts In-Stock

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25,422

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Corphita

USA . 2,630 parts In-Stock

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2,630

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Parana Technologies

USA . 523 parts In-Stock

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$0.038

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523

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$0.038

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Overview

Elevate your designs with the STPS16150CG-TR from STMicroelectronics, a top-tier solution in the world of diodes and rectifiers. Known for their exceptional reliability and performance, STMicroelectronics provides a trusted edge in high-voltage power applications. This compact surface mount diode excels in efficiency, minimizing energy loss while handling robust currents. With its superior construction, it promises durability for long-lasting operations, delivering unmatched value to engineers and manufacturers alike.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides excellent protection and ensures long-lasting performance in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for easier circuit integration and simplifies the design process for high-voltage applications.

Surface Mount: YES

Being surface mountable enhances the flexibility of production and design, making it suitable for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on a PCB, allowing for more efficient layouts.

No. of Terminals: 2

A simple 2-terminal design simplifies connectivity and reduces the complexity of circuit implementation.

Package Style (Meter): SMALL OUTLINE

The small outline package is ideal for space-constrained applications while providing reliable performance.

Application: HIGH VOLTAGE POWER

Designed specifically for high voltage applications, this diode offers reliability and stability in demanding environments.

Terminal Finish: MATTE TIN

The matte tin finish ensures good solderability and reduces the risk of corrosion, leading to better longevity.

Terminal Position: SINGLE

A single terminal position allows for straightforward connections, making installation easier.

Case Connection: CATHODE

The cathode connection simplifies the integration into various circuits, ensuring optimum performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, essential in power supply applications.

Maximum Forward Voltage (VF): 0.75 V

A low forward voltage drop increases efficiency during operation, which is beneficial for power-sensitive applications.

Maximum Output Current: 8 A

The capability to handle up to 8 A makes this diode suitable for a wide range of high-load applications.

Technology: SCHOTTKY

Schottky technology provides faster switching speeds and lower voltage drops, enhancing overall efficiency.

Terminal Form: GULL WING

Gull wing terminals facilitate easy mounting and better heat dissipation in high-performance scenarios.

No. of Elements: 2

Having two elements adds redundancy and enhances performance in critical applications.

Maximum Repetitive Peak Reverse Voltage: 150 V

The ability to withstand high reverse voltage improves reliability in circuits with significant voltage fluctuations.

Maximum Non Repetitive Peak Forward Current: 150 A

The diode can handle high peak currents, making it suitable for transient conditions and reducing failure risk.

Diode Element Material: SILICON

Silicon material offers excellent thermal stability and robustness for reliable operation across various temperatures.

Technical Specifications

Diodes & Rectifiers STPS16150CG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS16150CG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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