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STPS15H100CH

STMicroelectronics

STPS15H100CH by STMicroelectronics

STPS15H100CH by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max forward voltage of 0.67 V, supports up to 7.5 A output current, and has a peak reverse voltage of 100 V. Its compact in-line package ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,946 parts In-Stock

1+ parts

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8,946

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Digiode

USA . 2,104 parts In-Stock

1+ parts

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2,104

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Anansix

USA . 1,179 parts In-Stock

1+ parts

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1,179

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,940 parts In-Stock

1+ parts

$0.160

100+ parts

-

1k+ parts

$0.144

10k+ parts

-

1,940

$0.160

-

$0.144

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MKK Technologies

India . 86 parts In-Stock

1+ parts

$0.301

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-

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86

$0.301

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DigiPath Technology Company

USA . 86 parts In-Stock

1+ parts

$0.301

100+ parts

-

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86

$0.301

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AZTECH Wire

Italy . 985 parts In-Stock

1+ parts

$10.230

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-

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985

$10.230

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QUARKTWIN TECHNOLOGY LTD

USA . 25,335 parts In-Stock

1+ parts

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25,335

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Corphita

USA . 2,450 parts In-Stock

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2,450

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Parana Technologies

USA . 518 parts In-Stock

1+ parts

-

100+ parts

$0.191

1k+ parts

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518

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$0.191

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Overview

Elevate your high-voltage power applications with the STPS15H100CH from STMicroelectronics—a trusted leader in semiconductor innovation. This robust Schottky rectifier diode ensures unmatched efficiency and reliability, delivering superior performance for demanding environments. Its compact design and easy-to-integrate format make it ideal for a variety of applications, empowering you to optimize energy flow while reducing thermal losses. Experience the quality that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent durability and thermal resistance, making it suitable for high-voltage applications.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for easy integration into various circuit designs and provides flexibility in system configurations.

Package Shape: RECTANGULAR

The rectangular shape is optimized for space efficiency and ease of mounting in circuit boards.

No. of Terminals: 3

Three terminals provide easy connection options, enhancing the versatility of the component in circuit applications.

Package Style (Meter): IN-LINE

In-line package style allows for straightforward assembly and implementation in electronic devices.

Application: HIGH VOLTAGE POWER

Designed specifically for high-voltage applications, ensuring reliability and performance where it is needed most.

Terminal Position: SINGLE

Single terminal positioning simplifies installation and reduces the complexity of circuit routing.

Case Connection: CATHODE

Cathode case connection aids in achieving optimal electrical performance while maintaining design simplicity.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is capable of converting AC to DC efficiently, making it ideal for power supply circuits.

Maximum Forward Voltage (VF): 0.67 V

A low maximum forward voltage enhances energy efficiency, minimizing power loss during operation.

Maximum Output Current: 7.5 A

Able to handle a maximum output current of 7.5 A makes this diode suitable for high-demand applications.

Technology: SCHOTTKY

The Schottky technology provides very fast switching speeds and lower forward voltage drop.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust mechanical support and are optimal for high-power applications.

No. of Elements: 2

Having two elements allows for synchronous operations, increasing efficiency in various applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

A high repetitive peak reverse voltage ensures the diode can withstand substantial reverse voltage scenarios, enhancing reliability.

Maximum Non Repetitive Peak Forward Current: 75 A

With a maximum capability of 75 A for non-repetitive events, this diode can handle surges and transients effectively.

Diode Element Material: SILICON

Silicon usage guarantees a stable performance across a wide range of temperatures and conditions.

Technical Specifications

Diodes & Rectifiers STPS15H100CH attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.67 V

JESD-30 Code:

R-PSIP-T3

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

7.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS15H100CH Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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