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STM32L011G3U6TR

STMicroelectronics

STM32L011G3U6TR by STMicroelectronics

STM32L011G3U6TR from STMicroelectronics is a low-power 32-bit microcontroller ideal for battery-operated devices. It features a max supply voltage of 3.6V, 16 external interrupts, and operates in temperatures from -40 °C to 85 °C. Perfect for IoT applications, it supports I2C, SPI, and UART connectivity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,464 parts In-Stock

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5,464

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Digiode

USA . 3,640 parts In-Stock

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3,640

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Anansix

USA . 2,130 parts In-Stock

1+ parts

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2,130

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 5,976 parts In-Stock

1+ parts

$8.716

100+ parts

-

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5,976

$8.716

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AZTECH Wire

Italy . 182 parts In-Stock

1+ parts

$8.730

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-

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182

$8.730

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IDEA Electronic Components Group

UK . 282 parts In-Stock

1+ parts

$51.975

100+ parts

-

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$46.778

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282

$51.975

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$46.778

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MKK Technologies

India . 591 parts In-Stock

1+ parts

$97.736

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591

$97.736

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DigiPath Technology Company

USA . 591 parts In-Stock

1+ parts

$97.736

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591

$97.736

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Eastek

USA . 87,000 parts In-Stock

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87,000

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Vigor

Singapore . 7,500 parts In-Stock

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7,500

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Corphita

USA . 3,812 parts In-Stock

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3,812

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Parana Technologies

USA . 1,124 parts In-Stock

1+ parts

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$62.144

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1,124

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$62.144

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Overview

Unlock the potential of your next project with the STM32L011G3U6TR microcontroller from STMicroelectronics, a trusted leader in innovative technology. Its compact design and versatile features ensure exceptional performance while minimizing power consumption, making it ideal for battery-operated devices. With applications ranging from wearable tech to IoT solutions, this microcontroller delivers reliability and efficiency that elevate your designs to new heights. Experience unmatched quality and support from a manufacturer with a legacy of excellence!

Feature Benefit Bullets

Surface Mount: YES

Being surface mount enhances compactness and allows for easier integration into various applications.

Maximum Supply Voltage: 3.6 V

Allows for compatibility with a wide range of power supply systems, making it versatile for different projects.

On Chip Data RAM Width: 8

Optimizes data processing capabilities, suitable for applications needing efficient memory access.

Package Shape: SQUARE

The square package shape facilitates efficient PCB layout and space utilization.

Bit Size: 32

The 32-bit architecture enables better performance and the ability to handle complex computations.

No. of Terminals: 28

28 terminals allow for extensive connectivity options, enhancing functionality.

Package Style (Meter): CHIP CARRIER, VERY THIN PROFILE

The very thin profile ensures low height, making it ideal for space-constrained applications.

Minimum Supply Voltage: 1.8 V

This low minimum supply voltage is advantageous for battery-powered applications, helping conserve energy.

Maximum Operating Temperature: 85 °C

Allows the microcontroller to operate in varying environmental conditions, suitable for a range of applications.

CPU Family: CORTEX-M0

CORTEX-M0 is known for its low power consumption and high efficiency, making it suitable for low-power applications.

No. of External Interrupts: 16

With 16 external interrupts, the product can handle multiple real-time events, ensuring responsiveness in applications.

Minimum Operating Temperature: -40 °C

This wide temperature range makes it reliable for automotive and industrial applications.

ADC Channels: YES

Analog-to-digital conversion capabilities enable the microcontroller to interact with analog sensors, enhancing versatility.

DMA Channels: YES

Direct Memory Access improves data handling efficiency, allowing for faster operations and reduced CPU load.

Terminal Position: QUAD

The quad terminal position is favorable for efficient PCB layout and improved signal integrity.

ROM Words: 8192

A decent amount of ROM allows for more complex applications and routines to be stored.

Maximum Seated Height: 0.6 mm

This low-profile design enhances space efficiency in compact designs.

Width: 4 mm

Narrow width ensures it fits into tight spaces, boosting design flexibility.

Data EEPROM Size: 512

Having onboard EEPROM allows for data storage that maintains information even when power is lost.

Peripherals: BOR, COMPARATOR(2), POR, RTC, TIMER(4), WDT(2)

Rich peripheral set enhances functionality for various applications, providing integrated features.

Maximum Clock Frequency: 32 MHz

A 32 MHz clock frequency provides sufficient processing speed for most low-power applications.

Length: 4 mm

Compact length is ideal for fitting into space-constrained designs.

Peripheral IC Type: MICROCONTROLLER, RISC

The RISC architecture allows for efficient instruction execution, contributing to higher performance.

No. of Timers: 4

Multiple timers allow for precise timing control in various applications, enhancing functionality.

RAM Bytes: 2048

2048 bytes of RAM support moderately complex applications and enhances performance.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation, ideal for battery-operated devices.

Terminal Form: NO LEAD

No-lead terminals facilitate reliable soldering and improve compatibility with automated processes.

Analog To Digital Converters: 10-Ch 12-Bit

The 10-channel 12-bit ADC allows for high-resolution readings from multiple sensors simultaneously.

Maximum Supply Current: 6.5 mA

Low supply current maintains energy efficiency, making it suitable for battery-operated devices.

Nominal Supply Voltage: 3 V

A nominal supply voltage of 3V indicates compatibility with standard operating voltages in microcontroller applications.

No. of DMA Channels: 5

Five DMA channels enable efficient data transfer without burdening the CPU, resolving performance bottlenecks.

No. of Serial I/Os: 2

Two serial I/O ports enhance communication capabilities, allowing connection to multiple devices.

PWM Channels: YES

PWM support enables motor control and other analog signal emulation, broadening application scope.

Connectivity: I2C, LPUART, SPI, UART

Multiple connectivity options ensure seamless integration with various peripherals and modules.

ROM Programmability: FLASH

Flash programmability allows updates and modifications to programs, facilitating active development and prototyping.

Terminal Pitch: 0.5 mm

Fine terminal pitch enables high-density designs and precise component placement on PCBs.

Format: FIXED POINT

Fixed-point format simplifies computations, optimizing performance for many embedded applications.

Speed: 32 rpm

Adequate processing speed for managing controlled tasks in embedded applications.

Low Power Mode: YES

Low power mode ensures energy savings during idle states, extending battery life for portable applications.

On Chip Program ROM Width: 8

An 8-bit program ROM width supports straightforward programming and efficient data handling.

No. of I/O Lines: 24

24 I/O lines provide extensive compatibility for various input and output devices and sensors.

Technical Specifications

Microcontrollers STM32L011G3U6TR attributes and parameters. Explore more Microcontrollers devices from STMicroelectronics

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

NO

CPU Family:

CORTEX-M0

Maximum Clock Frequency:

32 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

NO

JESD-30 Code:

S-XQCC-N28

Length:

4 mm

Low Power Mode:

YES

No. of DMA Channels:

5

No. of External Interrupts:

16

No. of I/O Lines:

24

No. of Serial I/Os:

2

No. of Terminals:

28

No. of Timers:

4

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC28,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

RAM Bytes:

2048

ROM Words:

8192

ROM Programmability:

FLASH

Maximum Seated Height:

.6 mm

Speed:

32 rpm

Maximum Supply Current:

6.5 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4 mm

Peripheral IC Type:

Data EEPROM Size:

512

Connectivity:

I2C, LPUART, SPI, UART

Peripherals:

BOR, COMPARATOR(2), POR, RTC, TIMER(4), WDT(2)

Analog To Digital Convertors:

10-Ch 12-Bit

Trade Compliance

STM32L011G3U6TR Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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