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STG5223QTR

STMicroelectronics

STG5223QTR by STMicroelectronics

STG5223QTR from STMicroelectronics is a CMOS SPDT switch with a max on-state resistance of 0.55Ω and operates b/w 1.65V to 4.3V. It features a compact, thin profile package (1.8mm x 1.4mm) and supports industrial applications with -40 °C to 85 °C temp range. Ideal for multiplexing in low-power circuits, it ensures efficient signal routing with minimal delay (max switch-on time: 65ns).

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,077 parts In-Stock

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5,077

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Digiode

USA . 4,638 parts In-Stock

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Anansix

USA . 2,393 parts In-Stock

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Microchip USA

USA . 162 parts In-Stock

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$1.470

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162

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IDEA Electronic Components Group

UK . 819 parts In-Stock

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$2.705

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-

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$2.434

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819

$2.705

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$2.434

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MKK Technologies

India . 356 parts In-Stock

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$5.086

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356

$5.086

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DigiPath Technology Company

USA . 356 parts In-Stock

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$5.086

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356

$5.086

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AZTECH Wire

Italy . 248 parts In-Stock

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$12.290

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Component Stockers USA

USA . 777 parts In-Stock

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$99.990

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Kepictronics

USA . 75,000 parts In-Stock

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Perfect Parts

USA . 24,613 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 1,973 parts In-Stock

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Corphita

USA . 1,965 parts In-Stock

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Infinite Electronics LLP (Excess)

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Parana Technologies

USA . 1,017 parts In-Stock

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$3.234

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$3.234

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Overview

Unlock unparalleled versatility and reliability with the STG5223QTR from STMicroelectronics—your go-to solution for multiplexing and switching applications. Renowned for quality, STMicroelectronics delivers cutting-edge technology that excels in industrial settings. With a compact design and exceptional performance, this multiplexer enhances your circuit efficiency while ensuring robust operation in diverse environments. Experience seamless integration and superior control, elevating your projects to new heights of innovation!

Feature Benefit Bullets

Surface Mount: YES

The surface mount capability allows for compact design and easier integration into modern PCBs.

No. of Functions: 2

Having two functions provides flexibility and the ability to handle multiple signals or applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on the circuit board, enhancing layout options.

Nominal Supply Voltage (Vsup): 3.3 V

A nominal supply voltage of 3.3V is standard in many digital applications, ensuring compatibility.

Power Supplies (V): 1.8/4

Supports a range of power supply voltages, making it suitable for various applications.

No. of Terminals: 10

Ten terminals allow for versatile connections and configurations in complex circuits.

Package Style (Meter): CHIP CARRIER, VERY THIN PROFILE

The thin profile is ideal for space-constrained applications, allowing for a more compact design.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures that this product can function reliably in harsher environments.

Minimum Operating Temperature: -40 °C

The wide temperature range makes this component suitable for industrial and outdoor applications.

Terminal Finish: NICKEL PALLADIUM GOLD

This finish enhances reliability and provides excellent connectivity over time.

Terminal Position: QUAD

Quad terminal positioning allows for more efficient routing on the PCB.

Output (V): SEPARATE OUTPUT

Separate outputs provide isolation between signals, which enhances performance and reduces interference.

Maximum Seated Height: 0.55 mm

A low seated height aids in minimizing the overall profile of the device on the PCB.

Width: 1.4 mm

A narrow width allows for high-density designs and integration into limited spaces.

Other IC type: SPDT

Single Pole Double Throw configuration offers versatile switching capabilities for various applications.

Minimum Supply Voltage (Vsup): 1.65 V

The ability to operate at a lower supply voltage increases its applicability in battery-operated devices.

Maximum On-state Resistance (Ron): 0.55 ohm

Low on-state resistance minimizes power loss and heat generation, improving efficiency.

Maximum Switch-on Time: 65 ns

Fast switch-on time ensures quick signal flow, making it suitable for high-speed applications.

Length: 1.8 mm

A compact length makes it suitable for high-density layouts and smaller devices.

Maximum Switch-off Time: 40 ns

Short switch-off time contributes to better performance in fast switching applications.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable performance in challenging environments.

Technology: CMOS

CMOS technology enables low power consumption and high noise immunity, ideal for modern electronics.

Terminal Form: NO LEAD

No-lead design helps reduce PCB space and improves performance by minimizing parasitic inductance.

Terminal Pitch: 0.4 mm

A small terminal pitch supports high-density layouts, essential in modern electronics designs.

Maximum Supply Voltage (Vsup): 4.3 V

Flexibility with maximum supply voltage allows it to accommodate a range of applications.

Nominal Off-state Isolation: 66 dB

High off-state isolation reduces crosstalk between channels, enhancing signal integrity.

Switching (V): BREAK-BEFORE-MAKE

The break-before-make switching feature prevents short circuits, enhancing circuit reliability.

Technical Specifications

Multiplexers & Switches STG5223QTR attributes and parameters. Explore more Multiplexers & Switches devices from STMicroelectronics

Specs

Other IC type:

JESD-30 Code:

R-XQCC-N10

JESD-609 Code:

e4

Length:

1.8 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

10

Nominal Off-state Isolation:

66 dB

Maximum On-state Resistance (Ron):

.55 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC10,.05X.06,16

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Power Supplies (V):

1.8/4

Qualification:

Not Qualified

Maximum Seated Height:

.55 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

4.3 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Maximum Switch-off Time:

40 ns

Maximum Switch-on Time:

65 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width (mm):

1.4 mm

Trade Compliance

STG5223QTR Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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