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STF10NM60ND

STMicroelectronics

STF10NM60ND by STMicroelectronics

STF10NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 32A IDM, and 0.6 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 25W power dissipation and 150°C max temp.

Median Price

$2.630

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 946 parts In-Stock

1+ parts

$2.630

100+ parts

$1.190

1k+ parts

$1.170

10k+ parts

$1.100

946

$2.630

$1.190

$1.170

$1.100

DigiKey

USA . 378 parts In-Stock

1+ parts

$2.630

100+ parts

$1.183

1k+ parts

-

10k+ parts

-

378

$2.630

$1.183

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,416 parts In-Stock

1+ parts

$2.166

100+ parts

-

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1,416

$2.166

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Vyrian

USA . 1,352 parts In-Stock

1+ parts

$2.280

100+ parts

-

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1,352

$2.280

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Anansix

USA . 1,847 parts In-Stock

1+ parts

-

100+ parts

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1,847

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ACDS - Activité Composants Distribution Service

France . 550 parts In-Stock

1+ parts

-

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1k+ parts

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550

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,275 parts In-Stock

1+ parts

$0.903

100+ parts

-

1k+ parts

$0.812

10k+ parts

-

2,275

$0.903

-

$0.812

-

MKK Technologies

India . 1,645 parts In-Stock

1+ parts

$1.697

100+ parts

-

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10k+ parts

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1,645

$1.697

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DigiPath Technology Company

USA . 1,645 parts In-Stock

1+ parts

$1.697

100+ parts

-

1k+ parts

-

10k+ parts

-

1,645

$1.697

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Ampacity Inc.

Singapore . 510 parts In-Stock

1+ parts

$1.940

100+ parts

-

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510

$1.940

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Corphita

USA . 85 parts In-Stock

1+ parts

$2.052

100+ parts

-

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85

$2.052

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Microchip USA

USA . 3,790 parts In-Stock

1+ parts

$15.405

100+ parts

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3,790

$15.405

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

1+ parts

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50,000

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QUARKTWIN TECHNOLOGY LTD

USA . 27,532 parts In-Stock

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27,532

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Alle Elektronik GmbH

Germany . 4,256 parts In-Stock

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4,256

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Perfect Parts

USA . 1,745 parts In-Stock

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1,745

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Parana Technologies

USA . 654 parts In-Stock

1+ parts

-

100+ parts

$1.079

1k+ parts

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10k+ parts

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654

-

$1.079

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Authorized Procurement Solutions

USA . 574 parts In-Stock

1+ parts

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574

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Cyclops Electronics Ltd (Excess)

UK . 550 parts In-Stock

1+ parts

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1k+ parts

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550

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Glotronic Ltd.

UK . 440 parts In-Stock

1+ parts

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440

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Overview

Elevate your power control capabilities with the STF10NM60ND by STMicroelectronics. Crafted with precision and expertise, this N-CHANNEL Power Field Effect Transistor is a game-changer in the field of switching applications. Boasting a high DS breakdown voltage of 600V and a maximum pulsed drain current of 32A, this transistor delivers unparalleled performance and reliability. The built-in diode and enhancement mode operation further enhance its versatility and efficiency. Trust in STMicroelectronics to deliver cutting-edge technology that exceeds expectations. Choose the STF10NM60ND for superior power management solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient and reliable switching operations in the circuit.

Minimum DS Breakdown Voltage: 600 V

Suitable for high voltage applications, making it versatile for various electronic projects.

Maximum Pulsed Drain Current (IDM): 32 A

Capable of handling high current loads, ideal for applications that require a robust power supply.

Avalanche Energy Rating (EAS): 130 mJ

Can withstand energy spikes and surges, ensuring stability and protection for the circuit.

Maximum Power Dissipation (Abs): 25 W

Efficiently dissipates heat, preventing overheating and potential damage to the product.

Transistor Element Material: SILICON

Known for its reliability and stability in electronic components, ensuring consistent performance.

Technical Specifications

Power Field Effect Transistors (FET) STF10NM60ND attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

130 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

32 A

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STF10NM60ND Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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