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SMTY5.0A

STMicroelectronics

SMTY5.0A by STMicroelectronics

SMTY5.0A by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for surface mount applications. It features a max reverse power dissipation of 600 W, breakdown voltage of 6.4 V, and clamping voltage of 9 V, ideal for protecting sensitive electronics. Its compact design ensures efficient space utilization in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,715 parts In-Stock

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3,715

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Next Level Components, LLC

USA . 3,207 parts In-Stock

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3,207

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Anansix

USA . 2,792 parts In-Stock

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2,792

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Connector Distribution Corp

USA . 2,500 parts In-Stock

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2,500

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Right Parts Inc.

USA . 2,500 parts In-Stock

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2,500

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Digiode

USA . 1,757 parts In-Stock

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1,757

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,243 parts In-Stock

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$0.009

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$0.008

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2,243

$0.009

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$0.008

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MKK Technologies

India . 1,131 parts In-Stock

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$0.017

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1,131

$0.017

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DigiPath Technology Company

USA . 1,131 parts In-Stock

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$0.017

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1,131

$0.017

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Kepictronics

USA . 88,000 parts In-Stock

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88,000

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Parana Technologies

USA . 2,167 parts In-Stock

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$0.011

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2,167

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$0.011

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Corphita

USA . 526 parts In-Stock

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526

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Overview

Elevate your design with the SMTY5.0A from STMicroelectronics, a trusted leader in cutting-edge electronics. This robust transient suppression device guarantees superior protection for your circuits, ensuring reliability and longevity. With its compact surface mount design and advanced avalanche technology, it seamlessly integrates into diverse applications, from consumer electronics to industrial systems. Choose SMTY5.0A for unmatched quality and peace of mind in your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making the device suitable for various applications.

Config: SINGLE

A single configuration simplifies the design and integration process in your circuitry, making it easier to implement.

Surface Mount: YES

Being surface mount compatible allows for a compact design and easier automated assembly, saving space on PCB.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high peak reverse power dissipation, this device can handle transient surges effectively, providing robust protection.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient PCB layout and optimizes board space, enhancing the overall design.

No. of Terminals: 2

Two terminals make for a simple connection, reducing complexity and allowing for straightforward installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a compact footprint, which is perfect for space-constrained applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and ensures reliable electrical connectivity in assembly.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in PCB design and routing, making it easier to place in diverse applications.

Maximum Power Dissipation: 4 W

A maximum power dissipation of 4 W indicates the device's ability to handle operational heat, ensuring longevity and reliability.

Minimum Breakdown Voltage: 6.4 V

The minimum breakdown voltage of 6.4 V ensures that the device engages its protective mechanism at a safe level, adding reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it is engineered specifically to protect sensitive electronics from voltage spikes.

Technology: AVALANCHE

Avalanche technology allows for rapid response to voltage surges, providing superior transient suppression in critical applications.

Terminal Form: C BEND

C bend terminal form enhances mechanical stability and mounting orientation flexibility during PCB assembly.

Maximum Repetitive Peak Reverse Voltage: 5 V

With a low maximum repetitive peak reverse voltage, this device is ideal for protecting low-voltage circuits from transients.

Polarity: UNIDIRECTIONAL

Unidirectional polarity makes it suitable for protecting DC circuits, ensuring efficient operation while preventing reverse current.

Maximum Clamping Voltage: 9 V

The maximum clamping voltage of 9 V ensures that voltage spikes are effectively clamped, protecting downstream components efficiently.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical properties and reliability, making this device effective for transient suppression.

Technical Specifications

Transient Suppression Devices SMTY5.0A attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

6.4 V

Maximum Clamping Voltage:

9 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMTY5.0A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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