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SMA6J170A-TR

STMicroelectronics

SMA6J170A-TR by STMicroelectronics

SMA6J170A-TR by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a max reverse power dissipation of 600 W, breakdown voltage range of 189-209 V, and operates b/w -55 °C to 175°C. This device is perfect for surface mount applications requiring robust surge protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 10,000 parts In-Stock

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10,000

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Vyrian

USA . 8,354 parts In-Stock

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8,354

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Anansix

USA . 482 parts In-Stock

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482

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Digiode

USA . 317 parts In-Stock

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317

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,233 parts In-Stock

1+ parts

$0.010

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1,233

$0.010

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IDEA Electronic Components Group

UK . 265 parts In-Stock

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$0.019

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$0.017

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265

$0.019

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$0.017

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MKK Technologies

India . 1,494 parts In-Stock

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$0.036

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1,494

$0.036

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DigiPath Technology Company

USA . 1,494 parts In-Stock

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$0.036

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1,494

$0.036

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AZTECH Wire

Italy . 697 parts In-Stock

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$11.340

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697

$11.340

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Component Stockers USA

USA . 748 parts In-Stock

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$99.990

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748

$99.990

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Kepictronics

USA . 99,800 parts In-Stock

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Perfect Parts

USA . 9,356 parts In-Stock

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Corphita

USA . 3,777 parts In-Stock

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Parana Technologies

USA . 1,861 parts In-Stock

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$0.023

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1,861

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$0.023

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Overview

Elevate your circuit protection with the SMA6J170A-TR from STMicroelectronics, a trusted leader in semiconductor innovation. This robust transient suppression device ensures reliable performance in demanding environments, safeguarding critical components from voltage spikes. With a compact design and superior thermal management, it’s perfect for automotive, industrial, and consumer applications. Choose SMA6J170A-TR for peace of mind and enhanced system longevity!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances the durability and reliability of the device, making it suitable for various applications.

Config: SINGLE

The single configuration of this component simplifies integration into designs and reduces required board space.

Surface Mount: YES

Surface mount capability allows for ease of assembly and is ideal for automated manufacturing processes, improving production efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high power dissipation rating, the product can handle extreme transient events, making it effective in protecting sensitive electronics.

Nominal Breakdown Voltage: 199 V

This nominal breakdown voltage ensures effective voltage clamping in various applications, providing robust transient suppression.

Package Shape: RECTANGULAR

The rectangular shape contributes to a compact footprint, facilitating layout designs in crowded circuit boards.

No. of Terminals: 2

Having only two terminals simplifies connections, improving reliability and ease of installation in circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package is suitable for space-constrained applications, allowing for versatile placement on PCBs.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature rating ensures that the device can function in demanding environments without failure.

Minimum Operating Temperature: -55 °C

With a very low minimum operating temperature, this product is suitable for use in harsh conditions, including extreme cold.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability, ensuring reliable electrical connections during assembly.

Terminal Position: DUAL

The dual terminal position enhances the layout flexibility in designs, allowing for efficient routing and reduced component interference.

Maximum Power Dissipation: 4 W

The capability to dissipate up to 4 W of continuous power helps maintain safe operating conditions in various applications.

Minimum Breakdown Voltage: 189 V

The minimum breakdown voltage guarantees effective performance under varying voltage conditions, enhancing circuit protection.

Maximum Time At Peak Reflow Temperature: 10 s

The short reflow time ensures quick processing during assembly, reducing potential thermal damage to the device.

Peak Reflow Temperature: 260 °C

Handling a peak reflow temperature of 260 °C ensures compatibility with modern soldering processes and materials.

Maximum Breakdown Voltage: 209 V

The maximum breakdown voltage indicates strong performance under surge conditions, providing reliable protection for sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it is specifically designed to protect circuits from voltage spikes, making it essential in safeguarding electronics.

Technology: AVALANCHE

Avalanche technology allows for rapid response to voltage transients, ensuring effective suppression and protection of critical devices.

Terminal Form: C BEND

The C bend terminal form facilitates easy mounting and improves physical stability on printed circuit boards.

Maximum Repetitive Peak Reverse Voltage: 170 V

This rating ensures protection against recurring voltage spikes, making it a reliable choice for continuous operation in various applications.

Polarity: UNIDIRECTIONAL

Unidirectional polarity is ideal for applications requiring protection from voltage transients in a single direction, enhancing circuit safety.

Maximum Clamping Voltage: 275 V

A maximum clamping voltage of 275 V ensures that the device effectively limits transient voltages, thus protecting sensitive components from damage.

Diode Element Material: SILICON

Silicon as the diode element material offers great thermal stability and efficiency in conduction, ensuring reliable operation in transient suppression.

Technical Specifications

Transient Suppression Devices SMA6J170A-TR attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

209 V

Minimum Breakdown Voltage:

189 V

Nominal Breakdown Voltage:

199 V

Maximum Clamping Voltage:

275 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

170 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

SMA6J170A-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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