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SM30T68AY

STMicroelectronics

SM30T68AY by STMicroelectronics

SM30T68AY by STMicroelectronics is a single transient suppression device with 3000W power dissipation. It operates b/w -55°C to 175°C, with breakdown voltage ranging from 6.45V to 7.1V. Ideal for applications requiring high surge protection in automotive and industrial electronics.

Median Price

$0.727

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$0.727

100+ parts

-

1k+ parts

-

10k+ parts

-

72

$0.727

-

-

-

Vyrian

USA . 7,410 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,410

-

-

-

-

Anansix

USA . 1,479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,479

-

-

-

-

Digiode

USA . 675 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

675

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,276 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

-

10k+ parts

-

1,276

$0.010

-

-

-

IDEA Electronic Components Group

UK . 2,205 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

$0.050

10k+ parts

-

2,205

$0.055

-

$0.050

-

MKK Technologies

India . 2,324 parts In-Stock

1+ parts

$0.104

100+ parts

-

1k+ parts

-

10k+ parts

-

2,324

$0.104

-

-

-

DigiPath Technology Company

USA . 2,324 parts In-Stock

1+ parts

$0.104

100+ parts

-

1k+ parts

-

10k+ parts

-

2,324

$0.104

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.712

100+ parts

-

1k+ parts

$0.684

10k+ parts

-

100

$0.712

-

$0.684

-

Continental Prestige Electronics

USA . 1,988 parts In-Stock

1+ parts

$0.727

100+ parts

-

1k+ parts

-

10k+ parts

$0.712

1,988

$0.727

-

-

$0.712

Argo Parts USA

USA . 1,764 parts In-Stock

1+ parts

$0.727

100+ parts

-

1k+ parts

-

10k+ parts

-

1,764

$0.727

-

-

-

AZTECH Wire

Italy . 327 parts In-Stock

1+ parts

$6.846

100+ parts

-

1k+ parts

-

10k+ parts

-

327

$6.846

-

-

-

Parana Technologies

USA . 2,129 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

-

10k+ parts

-

2,129

-

$0.066

-

-

Corphita

USA . 925 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

925

-

-

-

-

Overview

Looking for reliable transient suppression devices for your electronic applications? Look no further than the SM30T68AY by STMicroelectronics. With a reputation for high-quality manufacturing, STMicroelectronics delivers top-notch products that excel in performance and durability. Ideal for a wide range of applications, these devices offer exceptional value by providing robust protection against voltage spikes and surges. Trust STMicroelectronics to provide you with the peace of mind you need for your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection, making the device durable and reliable.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

High power dissipation capacity ensures the device can handle sudden power surges effectively, protecting connected equipment.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows the device to function in various environmental conditions without performance degradation.

Minimum Breakdown Voltage: 6.45 V

Low breakdown voltage ensures that the device activates quickly to suppress any voltage spikes or surges, protecting downstream components.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with industry standards ensures the device meets quality and performance requirements for transient suppression applications.

Technical Specifications

Transient Suppression Devices SM30T68AY attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

7.1 V

Minimum Breakdown Voltage:

6.45 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SM30T68AY Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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