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SM30T12AY

STMicroelectronics

SM30T12AY by STMicroelectronics

SM30T12AY by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a max reverse power dissipation of 3000 W, operates b/w -55 °C to 175 °C, and has a breakdown voltage range of 11.4-12.6 V. Ideal for automotive applications, it meets AEC-Q101 standards for reliability.

Median Price

$0.480

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,164 parts In-Stock

1+ parts

$0.587

100+ parts

-

1k+ parts

-

10k+ parts

$0.460

1,164

$0.587

-

-

$0.460

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Future Electronics

Canada . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.440

2,500

-

-

-

$0.440

Chip1Stop

Japan . 1,164 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.499

1,164

-

-

-

$0.499

Verical

USA . 1,164 parts In-Stock

1+ parts

-

100+ parts

$0.460

1k+ parts

-

10k+ parts

-

1,164

-

$0.460

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,868 parts In-Stock

1+ parts

-

100+ parts

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7,868

-

-

-

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Digiode

USA . 4,380 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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-

4,380

-

-

-

-

ComSIT Distribution GmbH

Germany . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

IBS Electronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.605

2,500

-

-

-

$0.605

Anansix

USA . 112 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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112

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 931 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

$0.092

10k+ parts

-

931

$0.102

-

$0.092

-

MKK Technologies

India . 282 parts In-Stock

1+ parts

$0.192

100+ parts

-

1k+ parts

-

10k+ parts

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282

$0.192

-

-

-

DigiPath Technology Company

USA . 282 parts In-Stock

1+ parts

$0.192

100+ parts

-

1k+ parts

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10k+ parts

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282

$0.192

-

-

-

Component Stockers USA

USA . 1,911 parts In-Stock

1+ parts

$0.290

100+ parts

$0.270

1k+ parts

$0.260

10k+ parts

-

1,911

$0.290

$0.270

$0.260

-

AZTECH Wire

Italy . 654 parts In-Stock

1+ parts

$11.850

100+ parts

-

1k+ parts

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10k+ parts

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654

$11.850

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-

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Corphita

USA . 4,303 parts In-Stock

1+ parts

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100+ parts

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4,303

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-

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Parana Technologies

USA . 1,021 parts In-Stock

1+ parts

-

100+ parts

$0.122

1k+ parts

-

10k+ parts

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1,021

-

$0.122

-

-

A-Z Elektronik GmbH

Germany . 218 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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218

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Overview

Protect your circuits with the SM30T12AY from STMicroelectronics, a leader in semiconductor innovation. This high-performance transient suppression device ensures robust reliability and exceptional protection against voltage spikes, enhancing the longevity of your applications. With its compact design and impressive thermal performance, it’s perfect for automotive and industrial use. Choose the SM30T12AY for peace of mind and superior quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides reliable protection and durability, making the device suitable for various environmental conditions.

Config: SINGLE

The single configuration allows for straightforward integration into designs, promoting ease of use and space-saving on circuit boards.

Surface Mount: YES

Surface mount capability supports high-density circuit designs, enhancing manufacturing efficiency and reducing PCB space requirements.

Maximum Non-Repetitive Peak Reverse Power Dissipation: 3000 W

A high power dissipation capability ensures that the device can handle transient events effectively, protecting sensitive components.

Package Shape: RECTANGULAR

The rectangular shape is a standard form factor that simplifies the layout and integration into various applications.

No. of Terminals: 2

Having two terminals makes it easy to install the device in a circuit, facilitating quick connections and assembly.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for compact applications, helping to conserve valuable board space.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature ensures stability and performance in extreme conditions, enhancing device reliability.

Minimum Operating Temperature: -55 °C

Ability to operate in extreme cold temperatures makes this device suitable for use in harsh environments.

Terminal Position: DUAL

Dual terminal positioning improves connectivity options, providing versatility in circuit design.

Minimum Breakdown Voltage: 11.4 V

A low minimum breakdown voltage offers early detection and suppression of voltage spikes, protecting sensitive circuitry.

Maximum Breakdown Voltage: 12.6 V

The maximum breakdown voltage rating ensures the device provides an effective clamp for over-voltage protection.

Reference Standard: AEC-Q101; IEC-61000-4-2

Compliance with established standards ensures quality and reliability, instilling confidence in automotive and industrial applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a Transient Voltage Suppressor, this diode is specifically designed to protect against voltage spikes, safeguarding electronic circuits.

Technology: AVALANCHE

Avalanche technology allows for fast response to transient events, ensuring quick protection for sensitive components.

Terminal Form: C BEND

C bend terminals provide added mechanical stress relief, promoting the longevity and durability of the connections in challenging conditions.

Maximum Repetitive Peak Reverse Voltage: 10 V

With a maximum repetitive voltage of 10 V, this device is capable of absorbing multiple transient events without degradation in performance.

Polarity: UNIDIRECTIONAL

Unidirectional characteristics ensure specific protection against voltage spikes in one direction, simplifying circuit design requirements.

Diode Element Material: SILICON

Silicon as a diode element material offers excellent electrical characteristics, enhancing the overall performance and reliability of the device.

Technical Specifications

Transient Suppression Devices SM30T12AY attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

10 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SM30T12AY Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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