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LS404CD1

STMicroelectronics

LS404CD1 by STMicroelectronics

LS404CD1 by STMicroelectronics is a 4-function operational amplifier with max input offset voltage of 1000uV and nominal voltage of +-12V. It has a unity gain bandwidth of 2500kHz, making it ideal for commercial applications requiring precise signal amplification in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,506 parts In-Stock

1+ parts

-

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1k+ parts

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1,506

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Anansix

USA . 1,405 parts In-Stock

1+ parts

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1,405

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Vyrian

USA . 1,072 parts In-Stock

1+ parts

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1,072

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,902 parts In-Stock

1+ parts

$2.434

100+ parts

-

1k+ parts

$2.191

10k+ parts

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1,902

$2.434

-

$2.191

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MKK Technologies

India . 1,137 parts In-Stock

1+ parts

$4.578

100+ parts

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10k+ parts

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1,137

$4.578

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DigiPath Technology Company

USA . 1,137 parts In-Stock

1+ parts

$4.578

100+ parts

-

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-

10k+ parts

-

1,137

$4.578

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-

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Parana Technologies

USA . 2,112 parts In-Stock

1+ parts

-

100+ parts

$2.911

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10k+ parts

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2,112

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$2.911

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Standard Data Resources (Excess)

USA . 1,800 parts In-Stock

1+ parts

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1,800

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Corphita

USA . 840 parts In-Stock

1+ parts

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840

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Overview

Enhance your electronic designs with the LS404CD1 operational amplifier by STMicroelectronics. With a package body material of plastic/epoxy and 4 functions packed into a small outline, this product offers top-notch quality and reliability. Ideal for applications requiring precise signal amplification, this op amp boasts a nominal unity gain bandwidth of 2500 kHz and a minimum voltage gain of 20000. Experience superior performance and efficiency with the LS404CD1, providing customers with unmatched value and benefits for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product suitable for various applications.

Maximum Input Offset Voltage: 1000 uV

Low input offset voltage ensures accurate signal processing and minimal error in the output.

Maximum Average Bias Current (IIB): 0.3 uA

Low average bias current helps in reducing power consumption and improving overall efficiency.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference from the signal.

Nominal Supply Voltage / Vsup (V): 12

Stable supply voltage of 12V ensures consistent performance of the operational amplifier.

Maximum Supply Voltage Limit: 18 V

High maximum supply voltage limit provides flexibility in power supply options for various applications.

Nominal Unity Gain Bandwidth: 2500 kHz

High unity gain bandwidth enables the operational amplifier to amplify signals accurately at high frequencies.

Technology: BIPOLAR

Bipolar technology offers reliable performance and high gain, making the operational amplifier suitable for precision applications.

Nominal Slow Rate: 1 V/us

Low slow rate ensures stable and linear output response, especially in applications with varying input signals.

Technical Specifications

Operational Amplifiers (Op Amps) LS404CD1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±12 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

1000 uV

Minimum Voltage Gain:

20000

Nominal Slew Rate:

1 V/us

Peak Bias Current:

300 nA

Maximum Bias Current (IIB) @25 °C:

300 nA

Operational Characteristics

Nominal Supply Voltage:

12 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-12 V

Minimum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

3 mA

Physical Characteristics

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LS404CD1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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