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LM258AWYST

STMicroelectronics

LM258AWYST by STMicroelectronics

LM258AWYST by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 4000 µV and a nominal voltage of 5 V. It features low bias current (0.1 µA) and high common mode rejection ratio (85 dB). Ideal for automotive applications, it operates efficiently in compact designs.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 9,702 parts In-Stock

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Anansix

USA . 833 parts In-Stock

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833

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Digiode

USA . 234 parts In-Stock

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234

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IDEA Electronic Components Group

UK . 1,688 parts In-Stock

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$5.300

100+ parts

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$4.770

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$5.300

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$4.770

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MKK Technologies

India . 181 parts In-Stock

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$9.967

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DigiPath Technology Company

USA . 181 parts In-Stock

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$9.967

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181

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AZTECH Wire

Italy . 957 parts In-Stock

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$12.210

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Microchip USA

USA . 296 parts In-Stock

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$17.644

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296

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Perfect Parts

USA . 5,714 parts In-Stock

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Corphita

USA . 3,530 parts In-Stock

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Vigor

Singapore . 1,208 parts In-Stock

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Parana Technologies

USA . 713 parts In-Stock

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$6.337

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Overview

Unlock superior performance with the LM258AWYST from STMicroelectronics, a trusted name in innovation. This operational amplifier is designed for precision and efficiency, perfect for automotive applications thanks to its AEC-Q100 screening level. Its compact size and micropower profile ensure seamless integration into your designs, providing exceptional reliability and low bias current. Empower your projects with the quality and expertise that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and reliability, providing good protection against environmental factors.

Maximum Input Offset Voltage: 4000 uV

With a maximum input offset voltage of 4000 uV, this operational amplifier is suitable for precision applications where offset errors need to be minimized.

Maximum Average Bias Current (IIB): 0.1 uA

A low average bias current of 0.1 uA enhances the device's suitability for low-power and battery-operated applications.

Surface Mount: YES

Being a surface mount device allows for easier assembly and integration into compact electronic designs, saving space on PCBs.

No. of Functions: 2

Having two functions allows for versatile design options, enabling multiple applications to be served with a single component.

Screening Level: AEC-Q100

The AEC-Q100 screening level indicates reliability and performance in automotive applications, making this op-amp a great choice for the automotive industry.

Package Shape: SQUARE

The square package shape supports efficient use of PCB space and effective thermal management.

Nominal Common Mode Reject Ratio: 85 dB

An 85 dB common mode rejection ratio ensures high performance in noisy environments, making this op-amp ideal for signal processing applications.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V aligns well with common digital systems, simplifying power supply design.

Power Supplies (V): 5

Utilizing a standard supply voltage of 5V ensures compatibility with a wide range of circuits and systems.

No. of Terminals: 8

The 8-terminal design allows for a compact layout yet sufficient functionality for the op-amp's applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

A small outline, thin-profile package enables space-saving designs, crucial for modern lightweight electronics.

Minimum Slew Rate: 0.3 V/us

A minimum slew rate of 0.3 V/us supports the op-amp's ability to handle moderate frequency signals effectively.

Maximum Supply Voltage Limit: 32 V

With a maximum supply voltage limit of 32V, this op-amp is versatile enough for various high-voltage applications.

Maximum Operating Temperature: 70 °C

Rated for operations up to 70 °C, this op-amp ensures stability and performance in warmer environments.

Maximum Bias Current (IIB) @25°C: 0.05 uA

At 25 °C, a maximum bias current of 0.05 uA provides even lower power consumption, enhancing battery life in portable devices.

Frequency Compensation: YES

Frequency compensation facilitates stable operation across different frequencies, improving performance in high-speed applications.

Minimum Voltage Gain: 25000

A minimum voltage gain of 25000 signifies the op-amp's capability to amplify weak signals effectively, useful in sensor applications.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, the op-amp is suitable for applications in below-normal temperatures.

Terminal Position: DUAL

The dual terminal position design allows for easy integration into various circuit layouts, enhancing connection versatility.

Maximum Seated Height: 1.1 mm

The low seated height supports compact designs, essential for modern electronic devices.

Width: 3 mm

A compact width of 3 mm makes the op-amp suitable for densely populated PCB environments.

Micropower: YES

As a micropower op-amp, it is ideal for energy-efficient designs, significantly extending the operational life of battery-powered devices.

Length: 3 mm

The short length contributes to minimal PCB space consumption while maintaining functional performance.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable performance in standard operating conditions for consumer electronics.

Nominal Unity Gain Bandwidth: 1100 kHz

A high unity gain bandwidth of 1100 kHz allows the op-amp to operate efficiently at higher frequencies, suitable for fast signal processing.

Technology: BIPOLAR

Bipolar technology provides a good balance of speed and efficiency, making this op-amp suitable for a wide range of applications.

Terminal Form: GULL WING

Gull wing terminals improve soldering and provide stability on PCBs, ensuring reliable connections.

Amplifier Type: OPERATIONAL AMPLIFIER

Being classified as an operational amplifier means it is designed for a wide array of analog signal processing tasks.

Maximum Supply Current: 2 mA

A maximum supply current of 2 mA supports low-power applications, making it suitable for battery-operated devices.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture is widely used and enhances design flexibility in various applications.

Packing Method: TAPE AND REEL

Tape and reel packing allows for automated assembly processes, increasing manufacturing efficiency and reducing labor costs.

Nominal Slow Rate: 0.6 V/us

A nominal slow rate of 0.6 V/us supports moderate application requirements with stable performance.

Terminal Pitch: 0.65 mm

The 0.65 mm terminal pitch allows for easier mounting on PCBs, enhancing design flexibility.

Technical Specifications

Operational Amplifiers (Op Amps) LM258AWYST attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.3 V/us

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

100 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

LM258AWYST Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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