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L9930PD

STMicroelectronics

L9930PD by STMicroelectronics

L9930PD by STMicroelectronics is a MOSFET gate driver with 2 functions, operating at supply voltages b/w 8V to 18V. It features a small outline package style, matte tin terminal finish, and Gull Wing terminal form. Ideal for applications requiring high side drivers in compact spaces with a peak output current limit of 0.38A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,611 parts In-Stock

1+ parts

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2,611

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Anansix

USA . 1,761 parts In-Stock

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1,761

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Digiode

USA . 1,149 parts In-Stock

1+ parts

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1,149

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,896 parts In-Stock

1+ parts

$2.408

100+ parts

-

1k+ parts

$2.167

10k+ parts

-

1,896

$2.408

-

$2.167

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MKK Technologies

India . 1,966 parts In-Stock

1+ parts

$4.527

100+ parts

-

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1,966

$4.527

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DigiPath Technology Company

USA . 1,966 parts In-Stock

1+ parts

$4.527

100+ parts

-

1k+ parts

-

10k+ parts

-

1,966

$4.527

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AZTECH Wire

Italy . 309 parts In-Stock

1+ parts

$10.010

100+ parts

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309

$10.010

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Microchip USA

USA . 313 parts In-Stock

1+ parts

$11.524

100+ parts

-

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313

$11.524

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Component Stockers USA

USA . 304 parts In-Stock

1+ parts

$99.990

100+ parts

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304

$99.990

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Corphita

USA . 4,756 parts In-Stock

1+ parts

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4,756

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Vigor

Singapore . 2,371 parts In-Stock

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2,371

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Parana Technologies

USA . 157 parts In-Stock

1+ parts

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100+ parts

$2.879

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157

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$2.879

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Overview

Unlock the power of high-performance MOSFET gate drivers with the L9930PD by STMicroelectronics. Designed with precision and reliability in mind, this small outline package offers dual functionality for a wide range of applications. With a maximum supply voltage of 18V and a minimum supply voltage of 8V, this driver delivers unparalleled performance while maintaining a compact size of 15.9mm x 11mm x 3.6mm. Whether you're working on automotive, industrial, or consumer electronics projects, the L9930PD provides the perfect solution for driving your MOSFETs with ease and efficiency. Experience the quality and innovation that only STMicroelectronics can deliver with this exceptional product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 18 V

With a high maximum supply voltage, this MOSFET gate driver can handle a wide range of applications and power requirements.

No. of Functions: 2

Having multiple functions in a single device reduces the need for additional components, simplifying circuit design and saving space on the PCB.

Package Shape: RECTANGULAR

Rectangular package shape is common and easy to integrate into existing circuit layouts, making this product versatile and compatible with various systems.

No. of Terminals: 20

A higher number of terminals allow for more connectivity options and flexibility in circuit configuration, enabling complex applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact designs and applications where size constraints are a concern.

Minimum Supply Voltage: 8 V

With a low minimum supply voltage, this MOSFET gate driver can operate efficiently even in low-power scenarios, offering versatility and reliable performance.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and conductivity, ensuring reliable connections and optimal performance of the device.

Terminal Position: DUAL

Dual terminal position allows for symmetrical layout and improved thermal performance, minimizing heat dissipation and enhancing overall reliability.

Maximum Seated Height: 3.6 mm

Low seated height is beneficial for applications with limited vertical space, allowing for compact designs and efficient heat dissipation.

Width: 11 mm

Moderate width dimensions offer a balance between space-saving design and ease of handling during installation and assembly.

High Side Driver: YES

Including a high-side driver simplifies circuit design and provides effective voltage control, improving overall system efficiency and performance.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient reflow soldering process without risking damage to the components due to prolonged exposure to high temperatures.

Peak Reflow Temperature °C: 245

With a high peak reflow temperature, this MOSFET gate driver can withstand the soldering process with ease, ensuring reliable connections and durability.

Length: 15.9 mm

Moderate length dimensions offer a balance between compact design and sufficient space for terminal connections, ensuring ease of integration.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical stability and ease of soldering, ensuring reliable connections and durability under varying operating conditions.

Terminal Pitch: 1.27 mm

With a standard terminal pitch, this MOSFET gate driver is compatible with common PCB layouts and allows for easy integration into existing designs.

Moisture Sensitivity Level (MSL): 3

MSL level 3 indicates that this product has moderate sensitivity to moisture, making it suitable for indoor applications and controlled environments.

Nominal Output Peak Current Limit: 0.38 A

Having a nominal output peak current limit ensures safe operation and prevents overload, protecting the device and the surrounding circuitry from damage.

Interface IC Type: FULL BRIDGE BASED MOSFET DRIVER

Being a full bridge based MOSFET driver allows for efficient and precise control of power switching, making this product suitable for high-performance applications.

Technical Specifications

MOSFET Gate Drivers L9930PD attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e3

Length:

15.9 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

2

No. of Terminals:

20

Nominal Output Peak Current Limit:

.38 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Seated Height:

3.6 mm

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

8 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11 mm

Trade Compliance

L9930PD Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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