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L9930

STMicroelectronics

L9930 by STMicroelectronics

The STMicroelectronics L9930 is a MOSFET gate driver with 2 functions, operating at supply voltages b/w 8V to 18V. It features a nominal output peak current limit of 0.38A and is designed for full bridge based MOSFET driver applications. The package style is flange mount with a rectangular shape and through-hole terminal form.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 27,000 parts In-Stock

1+ parts

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27,000

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Digiode

USA . 1,913 parts In-Stock

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1,913

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Anansix

USA . 511 parts In-Stock

1+ parts

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511

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Vyrian

USA . 230 parts In-Stock

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230

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,420 parts In-Stock

1+ parts

$7.735

100+ parts

-

1k+ parts

$6.962

10k+ parts

-

1,420

$7.735

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$6.962

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MKK Technologies

India . 1,859 parts In-Stock

1+ parts

$14.546

100+ parts

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1,859

$14.546

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DigiPath Technology Company

USA . 1,859 parts In-Stock

1+ parts

$14.546

100+ parts

-

1k+ parts

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1,859

$14.546

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-

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A-Z Elektronik GmbH

Germany . 5,594 parts In-Stock

1+ parts

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5,594

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Corphita

USA . 4,676 parts In-Stock

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4,676

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Alle Elektronik GmbH

Germany . 3,729 parts In-Stock

1+ parts

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3,729

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Kepictronics

USA . 575 parts In-Stock

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575

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Parana Technologies

USA . 310 parts In-Stock

1+ parts

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100+ parts

$9.249

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310

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$9.249

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Overview

Revolutionize your electronic designs with the L9930 MOSFET Gate Driver by STMicroelectronics. With a reputation for top-quality components, STMicroelectronics delivers a product that boasts reliability and efficiency. Ideal for a range of applications, this driver offers unmatched performance and precision. Say goodbye to compromises and hello to the value and benefits that the L9930 brings to your projects. Trust in STMicroelectronics to provide you with the tools you need to take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the inner components of the gate driver, ensuring long-term reliability.

Maximum Supply Voltage: 18 V

The high maximum supply voltage allows for flexibility in various applications, accommodating a wide range of voltage requirements.

No. of Functions: 2

Having multiple functions allows for versatile use of the gate driver, catering to different circuit requirements effectively.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures easy integration into different electronic systems, optimizing space and layout.

No. of Terminals: 11

Having a higher number of terminals provides more connection options and flexibility in circuit design, enhancing customization possibilities.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting of the gate driver, reducing the risk of movement or disconnection in operation.

Minimum Supply Voltage: 8 V

The low minimum supply voltage ensures compatibility with a range of power sources, making the gate driver suitable for diverse applications.

Terminal Position: ZIG-ZAG

The zig-zag terminal position enables efficient and organized wiring connections, facilitating ease of installation and maintenance.

High Side Driver: YES

The inclusion of a high side driver in the gate driver design allows for effective control and operation of high-side MOSFETs, enhancing overall performance.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers robust and reliable connections, ensuring stable electrical contact and reducing the risk of connection issues.

Nominal Output Peak Current Limit: 0.38 A

The nominal output peak current limit of 0.38A provides sufficient current capacity for driving MOSFETs, supporting optimal performance and reliability.

Interface IC Type: FULL BRIDGE BASED MOSFET DRIVER

The full bridge-based MOSFET driver interface IC type offers advanced control and operation capabilities, allowing for precise and efficient MOSFET switching in various applications.

Technical Specifications

MOSFET Gate Drivers L9930 attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PZFM-T11

No. of Functions:

2

No. of Terminals:

11

Nominal Output Peak Current Limit:

.38 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

8 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

L9930 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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