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L6387DTR

STMicroelectronics

L6387DTR by STMicroelectronics

L6387DTR by STMicroelectronics is a dual independent gate driver for IGBT and N-channel MOSFETs, supporting up to 600V. It features a peak output current of 650mA and operates in temperatures from -45 °C to 125°C. Ideal for power management applications, it comes in an 8-SOIC package.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 37,500 parts In-Stock

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37,500

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Chip Stock

USA . 10,890 parts In-Stock

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10,890

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Vyrian

USA . 2,330 parts In-Stock

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2,330

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Digiode

USA . 1,423 parts In-Stock

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1,423

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Anansix

USA . 913 parts In-Stock

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913

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NexGen Digital

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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AZTECH Wire

Italy . 514 parts In-Stock

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$15.730

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514

$15.730

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Advanced Electronics

New Zealand . 48 parts In-Stock

1+ parts

$67.907

100+ parts

$61.795

1k+ parts

$55.684

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48

$67.907

$61.795

$55.684

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Component Stockers USA

USA . 748 parts In-Stock

1+ parts

$99.990

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748

$99.990

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Perfect Parts

USA . 8,228 parts In-Stock

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8,228

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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5,000

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Microchip USA

USA . 4,965 parts In-Stock

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4,965

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Vigor

Singapore . 2,500 parts In-Stock

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2,500

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A-Z Elektronik GmbH

Germany . 1,961 parts In-Stock

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1,961

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IDEA Electronic Components Group

UK . 1,348 parts In-Stock

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1,348

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Alle Elektronik GmbH

Germany . 1,307 parts In-Stock

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1,307

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Assy Fe

Spain . 1,278 parts In-Stock

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MKK Technologies

India . 1,253 parts In-Stock

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DigiPath Technology Company

USA . 1,253 parts In-Stock

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1,253

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Parana Technologies

USA . 860 parts In-Stock

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860

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Corphita

USA . 750 parts In-Stock

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750

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Cyclops Electronics Ltd (Excess)

UK . 79 parts In-Stock

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79

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Overview

Unlock the power of precision with the L6387DTR from STMicroelectronics, a leader in innovation and reliability. This high-performance gate driver enhances efficiency in various applications, from industrial automation to renewable energy solutions. With its robust design and exceptional temperature range, the L6387DTR ensures seamless operation under demanding conditions. Choose STMicroelectronics for unparalleled quality and elevate your projects today!

Feature Benefit Bullets

Other Names: 497-4015-1-NDR, 497-4015-2-NDR, -497-4015-2, -497-4015-1, 497-4015-1, 497-4015-2

These multiple names provide flexibility in sourcing and compatibility with various applications, making the product easily recognizable.

Standard Package: 2,500

A large standard package quantity is advantageous for bulk purchasing, reducing costs for manufacturers.

Category: Integrated Circuits (ICs) / Power Management (PMIC) / Gate Drivers

This categorization highlights its role in power management, vital for efficient energy use in electronic systems.

Driven Configuration: Half-Bridge

The half-bridge configuration is ideal for driving motors and other applications requiring efficient power switching.

Channel Type: Independent

Independent channel control allows for greater flexibility in design and operation of circuits, enhancing overall performance.

Number of Drivers: 2

Having two drivers in one package increases functionality and reduces board space, simplifying design.

Gate Type: IGBT, N-Channel MOSFET

Supports both IGBT and N-channel MOSFET, making it versatile for various applications in power electronics.

Voltage - Supply: 17V (Max)

A maximum supply voltage of 17V enables it to be used in many applications requiring low to moderate voltage levels.

Logic Voltage - VIL, VIH: 1.5V, 3.6V

These logic voltage levels ensure compatibility with a variety of logic families, making integration easier.

Current - Peak Output (Source, Sink): 400mA, 650mA

High peak output currents provide robust driving capabilities for various load types, enhancing performance.

Input Type: Inverting

Inverting input type can simplify circuit designs where the desired output signal is inverted relative to the input.

High Side Voltage - Max (Bootstrap): 600V

A maximum bootstrap voltage of 600V allows for use in high-voltage applications, increasing versatility.

Rise / Fall Time (Typ): 50ns, 30ns

Fast rise and fall times improve switching efficiency, leading to less heat generation and better overall performance.

Operating Temperature: -45 °C ~ 125°C (TJ)

Wide operating temperature range makes this device suitable for harsh environments, enhancing reliability.

Mounting Type: Surface Mount

Surface mount technology minimizes PCB space requirements and allows for automated assembly, improving manufacturing efficiency.

Package / Case: 8-SOIC (0.154", 3.90mm Width)

The compact 8-SOIC package allows for better thermal management while fitting into tighter spaces on circuit boards.

Supplier Device Package: 8-SOIC

This specification ensures compatibility with standard PCB footprints and simplifies sourcing for manufacturers.

Base Product Number: L6387

The base part number indicates a well-documented product, facilitating easier integration and support.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

An MSL of 1 indicates this product can withstand exposure to moisture without special packaging, simplifying logistics and assembly.

Technical Specifications

Additional Parts L6387DTR attributes and parameters. Explore more Additional Parts devices from STMicroelectronics

Technical Specifications

Other Names:

497-4015-1-NDR
497-4015-2-NDR
-497-4015-2
-497-4015-1
497-4015-1
497-4015-2

Operating Temperature:

-45°C ~ 125°C (TJ)

Input Type:

Inverting

Category:

Integrated Circuits (ICs)
Power Management (PMIC) Gate Drivers

Driven Configuration:

Half-Bridge

Rise / Fall Time (Typ):

50ns, 30ns

Number of Drivers:

2

Gate Type:

IGBT, N-Channel MOSFET

Mounting Type:

Surface Mount

Current - Peak Output (Source, Sink):

400mA, 650mA

Supplier Device Package:

8-SOIC

Standard Package:

2,500

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Voltage - Supply:

17V (Max)

Packaging:

Tape & Reel (TR)
Cut Tape (CT)

Channel Type:

Independent

High Side Voltage - Max (Bootstrap):

600 V

Logic Voltage - VIL, VIH:

1.5V, 3.6V

Base Product Number:

L6387

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

L6387DTR Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8542.39.0001

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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