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ITA6V1M3

STMicroelectronics

ITA6V1M3 by STMicroelectronics

ITA6V1M3 by STMicroelectronics is a transient suppression device with 18 common anode elements. It has a max breakdown voltage of 6.1V and max clamping voltage of 12V, making it ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,101 parts In-Stock

1+ parts

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1k+ parts

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4,101

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Vyrian

USA . 1,797 parts In-Stock

1+ parts

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1,797

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Anansix

USA . 1,589 parts In-Stock

1+ parts

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1,589

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,192 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

$0.135

10k+ parts

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1,192

$0.150

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$0.135

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MKK Technologies

India . 741 parts In-Stock

1+ parts

$0.282

100+ parts

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741

$0.282

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DigiPath Technology Company

USA . 741 parts In-Stock

1+ parts

$0.282

100+ parts

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741

$0.282

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Parana Technologies

USA . 1,051 parts In-Stock

1+ parts

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100+ parts

$0.179

1k+ parts

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1,051

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$0.179

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Corphita

USA . 93 parts In-Stock

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93

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Overview

Experience the superior quality and reliability of the ITA6V1M3 by STMicroelectronics, a leading manufacturer in the industry. As a Transient Suppression Device, this product offers protection against voltage spikes and surges, ensuring the smooth operation of your electronic devices. With its common anode configuration and small outline package style, the ITA6V1M3 is perfect for a wide range of applications. Trust in STMicroelectronics to deliver high-performance components that provide peace of mind and safeguard your valuable equipment from potential damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for electronic applications.

Config: COMMON ANODE, 18 ELEMENTS

The common anode configuration with 18 elements allows for effective transient suppression across multiple channels, providing comprehensive protection.

Surface Mount: YES

The surface mount capability makes installation easy and efficient, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design, suitable for space-constrained applications.

No. of Terminals: 20

With 20 terminals, this product provides flexibility in connection options, accommodating various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes the footprint of the device, making it suitable for densely populated circuit boards.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and a reliable electrical connection.

Terminal Position: DUAL

Having dual terminal positions offers versatility in mounting options, allowing for easy integration into different circuit layouts.

Maximum Breakdown Voltage: 6.1 V

The high maximum breakdown voltage of 6.1 V provides robust protection against voltage surges, ensuring the safety of connected devices.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type is specifically designed for transient voltage suppression, making it highly effective in safeguarding sensitive electronic components.

Technology: AVALANCHE

The use of avalanche technology allows for rapid response to transient events, ensuring rapid clamping and protection of downstream components.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy surface mounting and provides mechanical strength to the connection, enhancing overall reliability.

No. of Elements: 18

With 18 elements, this product offers comprehensive transient suppression across multiple channels, providing enhanced protection for sensitive circuits.

Maximum Repetitive Peak Reverse Voltage: 5 V

The maximum repetitive peak reverse voltage of 5 V ensures reliable performance under varying operating conditions, enhancing the product's durability.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device effectively clamps transient voltages in one direction, providing targeted protection for specific circuit configurations.

Maximum Clamping Voltage: 12 V

The maximum clamping voltage of 12 V limits the voltage excursion during a transient event, preventing damage to downstream components.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high reliability and performance stability, making the product a dependable choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices ITA6V1M3 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

6.1 V

Maximum Clamping Voltage:

12 V

Config:

COMMON ANODE, 18 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e0

No. of Elements:

18

No. of Terminals:

20

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

ITA6V1M3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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