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ITA25B3

STMicroelectronics

ITA25B3 by STMicroelectronics

ITA25B3 by STMicroelectronics is a bidirectional transient voltage suppressor diode with a max reverse power dissipation of 300 W. It features a compact 20-terminal design and operates up to 125 °C, ideal for protecting sensitive electronics from voltage spikes. With a breakdown voltage of 25 V, it ensures reliable performance in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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Vyrian

USA . 10,155 parts In-Stock

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Bristol Electronics

USA . 1,453 parts In-Stock

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Digiode

USA . 579 parts In-Stock

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Anansix

USA . 254 parts In-Stock

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254

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Q Components

USA . 232 parts In-Stock

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Ashlea Components Ltd

UK . 173 parts In-Stock

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ECAB

Sweden . 158 parts In-Stock

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Elcom Components

USA . 114 parts In-Stock

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114

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Corel Iberica Componentes, S.L.

Spain . 80 parts In-Stock

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80

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Lakeland Logistics Inc

USA . 55 parts In-Stock

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Sea View Technologies

USA . 28 parts In-Stock

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R&J Components

USA . 25 parts In-Stock

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25

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LWI Electronics Inc

India . 23 parts In-Stock

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Prism Electronics

USA . 15 parts In-Stock

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Resion

USA . 6 parts In-Stock

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IDEA Electronic Components Group

UK . 1,408 parts In-Stock

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$0.146

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$0.132

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$0.146

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MKK Technologies

India . 1,889 parts In-Stock

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$0.275

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$0.275

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DigiPath Technology Company

USA . 1,889 parts In-Stock

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$0.275

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$0.275

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AZTECH Wire

Italy . 1,063 parts In-Stock

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$13.670

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$13.670

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A-Z Elektronik GmbH

Germany . 7,143 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,762 parts In-Stock

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Kepictronics

USA . 4,350 parts In-Stock

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Corphita

USA . 1,919 parts In-Stock

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Perfect Parts

USA . 1,303 parts In-Stock

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Metaverse IC Inc.

Canada . 491 parts In-Stock

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Parana Technologies

USA . 195 parts In-Stock

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$0.175

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Overview

Unlock unparalleled protection for your electronic designs with the ITA25B3 from STMicroelectronics, a leader in innovative semiconductor solutions. This transient suppression device expertly shields sensitive components from voltage spikes, ensuring reliability in automotive, industrial, and consumer applications. With its compact design and superior performance, the ITA25B3 combines exceptional durability and efficiency, delivering peace of mind and long-term value for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and protection against environmental factors, making it suitable for a variety of applications.

Config: COMMON CATHODE, 10 ELEMENTS

This configuration of 10 elements allows for enhanced transient suppression, providing reliable protection in complex circuits.

Surface Mount: YES

Being a surface mount device facilitates easy integration into modern PCB designs, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

With a high power dissipation capability, this device can handle transient surges effectively, ensuring circuit stability and longevity.

Maximum Reverse Current: 4 uA

The low reverse current specification minimizes leakage, conserving energy and enhancing overall circuit performance.

Package Shape: RECTANGULAR

The rectangular shape is ideal for efficient use of PCB space while facilitating efficient thermal management.

No. of Terminals: 20

The 20 terminal design allows for versatile connections and configurations, making it adaptable for various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces footprint, making it suitable for compact electronic designs.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature provides reliability in demanding environments, making it suitable for rugged applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The premium terminal finish ensures excellent conductivity and corrosion resistance, enhancing the lifespan of the device.

Terminal Position: DUAL

Dual terminal position eases integration into various layouts, promoting versatility in circuit design.

Minimum Breakdown Voltage: 25 V

A minimum breakdown voltage of 25 V provides safety and protection in circuits, preventing damage from voltage excursions.

Maximum Time At Peak Reflow Temperature: 30 s

The short peak reflow time helps in maintaining component integrity during soldering processes, ensuring reliable performance.

Peak Reflow Temperature: 260 °C

The high peak reflow temperature tolerance allows for compatibility with modern soldering techniques, increasing production efficiency.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type effectively suppresses voltage transients, providing reliable protection for sensitive electronics.

Technology: AVALANCHE

Utilizing avalanche technology ensures quick response to over-voltage conditions, significantly enhancing circuit protection capabilities.

Terminal Form: GULL WING

The gull wing terminal design facilitates straightforward and reliable soldering, crucial for high-volume production.

No. of Elements: 10

The presence of 10 elements offers comprehensive transient protection, catering to high-demand applications requiring robustness.

Maximum Repetitive Peak Reverse Voltage: 24 V

A maximum repetitive peak reverse voltage of 24 V ensures that the device can safely handle common voltage levels in consumer and industrial applications.

Moisture Sensitivity Level (MSL): 3

With an MSL of 3, this device has moderate sensitivity to moisture, guiding users in proper handling and storage to maintain reliability.

Polarity: BIDIRECTIONAL

The bidirectional polarity allows the device to protect against voltage spikes in both positive and negative directions, enhancing circuit protection versatility.

Minimum Diode Capacitance: 420 pF

The minimum diode capacitance of 420 pF balances between effective signal integrity and transient suppression, making it ideal for sensitive applications.

Maximum Clamping Voltage: 36 V

A low maximum clamping voltage helps protect sensitive components from high voltage transients, ensuring the safety of the overall circuit.

Diode Element Material: SILICON

Silicon as the diode element material ensures reliability and effective performance across a wide range of temperatures and conditions.

Technical Specifications

Transient Suppression Devices ITA25B3 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

25 V

Maximum Clamping Voltage:

36 V

Config:

COMMON CATHODE, 10 ELEMENTS

Minimum Diode Capacitance:

420 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

10

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Maximum Reverse Current:

4 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ITA25B3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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