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ITA25B1

STMicroelectronics

ITA25B1 by STMicroelectronics

ITA25B1 by STMicroelectronics is a bidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a max reverse power dissipation of 300 W, operates up to 125 °C, and has a breakdown voltage of 25 V. Ideal for surface mount applications, it ensures reliable performance against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Vyrian

USA . 4,947 parts In-Stock

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Electronics Depot

USA . 1,527 parts In-Stock

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Kronex Distribution GmbH

USA . 1,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 500 parts In-Stock

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500

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Anansix

USA . 461 parts In-Stock

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461

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Digiode

USA . 312 parts In-Stock

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Martec Srl

Italy . 200 parts In-Stock

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200

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Prism Electronics

USA . 186 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 79 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 71 parts In-Stock

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PC Components Company LLC

USA . 51 parts In-Stock

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Bristol Electronics

USA . 51 parts In-Stock

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Manotoh

Italy . 14 parts In-Stock

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IDEA Electronic Components Group

UK . 1,642 parts In-Stock

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$0.043

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$0.039

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MKK Technologies

India . 1,438 parts In-Stock

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$0.081

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DigiPath Technology Company

USA . 1,438 parts In-Stock

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AZTECH Wire

Italy . 1,104 parts In-Stock

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$21.060

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Component Stockers USA

USA . 246 parts In-Stock

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$99.990

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Authorized Procurement Solutions

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Kepictronics

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Corphita

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Assy Fe

Spain . 1,062 parts In-Stock

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Parana Technologies

USA . 986 parts In-Stock

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$0.052

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Overview

Elevate your designs with the ITA25B1 from STMicroelectronics, a trusted leader in high-performance semiconductor solutions. This robust transient suppression device ensures exceptional reliability, safeguarding your circuits against voltage spikes while maintaining optimal performance. Its compact design and dual terminal configuration make integration effortless across various applications, from automotive to consumer electronics. Experience superior quality and peace of mind knowing you're backed by ST's commitment to innovation and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy offers good thermal stability and protects against environmental factors, making this device reliable in various applications.

Config: COMMON CATHODE, 6 ELEMENTS

This configuration allows for enhanced protection in circuits, accommodating multiple voltage levels while simplifying design.

Surface Mount: YES

Surface mount technology enables compact design and efficient use of space on PCBs, vital for modern electronics.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

High power dissipation capability allows this device to handle transient events effectively, providing superior protection.

Maximum Reverse Current: 4 uA

Low reverse current signifies minimal leakage, enhancing energy efficiency and prolonging overall system life.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout and integration into PCB designs, optimizing space.

No. of Terminals: 8

With 8 terminals, this device offers flexibility in circuit design, suitable for various applications including automotive and industrial.

Package Style (Meter): SMALL OUTLINE

The small outline package is ideal for space-constrained applications, facilitating the miniaturization of electronic devices.

Maximum Operating Temperature: 125 °C

A high operating temperature rating ensures reliability in demanding environments and enhances the range of applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Premium terminal finishes provide excellent solderability and corrosion resistance, ensuring long-term reliability in connections.

Terminal Position: DUAL

Dual terminal position simplifies PCB layout and enhances design flexibility, catering to varied circuit configurations.

Minimum Breakdown Voltage: 25 V

This minimum breakdown value indicates robust protection against voltage spikes, making it suitable for sensitive applications.

Maximum Time At Peak Reflow Temperature: 30 s

Short peak reflow time minimizes the thermal stress on components during assembly, improving overall reliability.

Peak Reflow Temperature: 260 °C

A high reflow temperature accommodates various soldering processes, ensuring compatibility with modern manufacturing.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a transient voltage suppressor diode ensures rapid response to voltage spikes, offering vital protection for sensitive electronics.

Technology: AVALANCHE

Avalanche technology provides excellent clamping performance during transients, crucial for safeguarding circuit integrity.

Terminal Form: GULL WING

Gull-wing terminals facilitate easy assembly and soldering, improving manufacturability and increasing connection reliability.

No. of Elements: 6

Having 6 elements enhances its capability to manage multiple transient voltages, providing robust protection in diverse applications.

Maximum Repetitive Peak Reverse Voltage: 24 V

A lower maximum repetitive peak reverse voltage allows for safe operation in typical electronic circuits, preventing damage due to overvoltage.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates controlled moisture sensitivity, facilitating easier handling and storage without the need for additional precautions.

Polarity: BIDIRECTIONAL

Bidirectional capability protects against transients in both directions, offering comprehensive circuit protection.

Minimum Diode Capacitance: 300 pF

The minimum diode capacitance provides a balance between protection and circuit performance, essential for high-frequency applications.

Maximum Clamping Voltage: 38 V

A maximum clamping voltage of 38 V ensures effective limiting of voltage spikes, protecting sensitive devices connected to power lines.

Diode Element Material: SILICON

Silicon as the diode element material ensures good performance characteristics and reliability, crucial for long-lasting applications.

Technical Specifications

Transient Suppression Devices ITA25B1 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

25 V

Maximum Clamping Voltage:

38 V

Config:

COMMON CATHODE, 6 ELEMENTS

Minimum Diode Capacitance:

300 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

6

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Maximum Reverse Current:

4 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ITA25B1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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