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ESDA14V2-4BF2

STMicroelectronics

ESDA14V2-4BF2 by STMicroelectronics

ESDA14V2-4BF2 by STMicroelectronics is a bidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a breakdown voltage of 16.1 V, max power dissipation of 50 W, and operates in a compact grid array package. This device is perfect for applications requiring robust surge protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,215 parts In-Stock

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Bristol Electronics

USA . 4,993 parts In-Stock

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4,993

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Atlantic Semiconductor

USA . 4,993 parts In-Stock

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4,993

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Anansix

USA . 1,110 parts In-Stock

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1,110

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Cyclops Electronics Ltd

UK . 650 parts In-Stock

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650

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Digiode

USA . 446 parts In-Stock

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446

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Resion

USA . 418 parts In-Stock

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418

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 486 parts In-Stock

1+ parts

$0.056

100+ parts

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$0.051

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486

$0.056

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$0.051

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MKK Technologies

India . 737 parts In-Stock

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$0.106

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737

$0.106

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DigiPath Technology Company

USA . 737 parts In-Stock

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$0.106

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737

$0.106

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Northwest PG Solutions

USA . 1,741 parts In-Stock

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$3.113

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$3.113

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AZTECH Wire

Italy . 75 parts In-Stock

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$20.330

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75

$20.330

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Component Stockers USA

USA . 458 parts In-Stock

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$99.990

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458

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A-Z Elektronik GmbH

Germany . 6,114 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,076 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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Parana Technologies

USA . 883 parts In-Stock

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$0.067

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$0.067

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Native Components

USA . 424 parts In-Stock

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$2.745

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424

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$2.745

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Corphita

USA . 123 parts In-Stock

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Overview

Protect your circuits with confidence using the ESDA14V2-4BF2 from STMicroelectronics—a leader in innovative semiconductor solutions. This advanced transient suppression device ensures top-notch performance and reliability, safeguarding your electronics from voltage spikes and surges. With its compact design and bidirectional nature, it's perfect for a wide range of applications, enhancing both durability and functionality. Trust STMicroelectronics for quality that translates into peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robustness and longevity of the device, making it suitable for various applications.

Config: COMPLEX

The complex configuration allows for versatile usage in numerous designs, accommodating various circuit requirements.

Surface Mount: YES

Being surface mount compatible simplifies the integration process into modern PCB designs, enhancing manufacturing efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 50 W

With a maximum of 50 W power dissipation, this device can handle significant surges, providing excellent transient protection.

Nominal Breakdown Voltage: 16.1 V

A nominal breakdown voltage of 16.1 V allows for effective clamping in applications where over-voltage protection is essential.

Package Shape: SQUARE

The square package shape enhances space efficiency on circuit boards, allowing for optimized layout designs.

No. of Terminals: 5

Five terminals provide versatility in connections, facilitating various circuit configurations and designs.

Package Style (Meter): GRID ARRAY

A grid array package style promotes better heat dissipation and enhances mechanical stability in circuitry.

Terminal Position: BOTTOM

Bottom-terminal positioning simplifies soldering processes and contributes to a solid mechanical structure in circuit assemblies.

Minimum Breakdown Voltage: 14.2 V

A minimum breakdown voltage of 14.2 V ensures that the device can operate safely under lower voltage conditions, improving circuit reliability.

Maximum Time At Peak Reflow Temperature (s): 40

A maximum reflow time of 40 seconds allows for optimal manufacturing conditions without damaging the device, ensuring integrity in production.

Peak Reflow Temperature °C: 260

Having a peak reflow temperature of 260 °C indicates compatibility with high-temperature PCB assembly processes, which is essential for modern electronics.

Maximum Breakdown Voltage: 18 V

The maximum breakdown voltage of 18 V provides robust protection against voltage spikes, securing sensitive electronic components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it is designed explicitly for protecting circuits from voltage transients, enhancing overall device reliability.

Technology: AVALANCHE

Utilizing avalanche technology allows this device to efficiently clamp high voltage spikes, ensuring effective transient suppression.

Terminal Form: BALL

Ball terminal form enhances the connection robustness and reduces stress on solder joints, contributing to the longevity of the device.

No. of Elements: 4

With four elements, this device can provide broad protection across a range of voltages, making it versatile for multiple applications.

Polarity: BIDIRECTIONAL

Bidirectional polarity enables the device to clamp voltage spikes in both directions, ideal for AC applications and enhancing circuit protection.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent performance characteristics for voltage suppression, ensuring reliability and efficiency.

Technical Specifications

Transient Suppression Devices ESDA14V2-4BF2 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

18 V

Minimum Breakdown Voltage:

14.2 V

Nominal Breakdown Voltage:

16.1 V

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

S-PBGA-B5

Maximum Non Repetitive Peak Reverse Power Dissipation:

50 W

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

ESDA14V2-4BF2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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